DMP3018SSS-13 P-Channel enhancement mode MOSFET with 30V drain-source voltage, 12mΩ on-resistance, and continuous drain current of 10.5A. Surface-mount 8-SOIC package.
Mfr Part #:

DMP3018SSS-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET with 30V drain-source voltage, 12mΩ on-resistance, and continuous drain current of 10.5A. Surface-mount 8-SOIC package.
✓ Total Stock: 22,500 pcs
$ Price Range: $0.48 - $1.18

DMP3018SSS-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
20,000 pcs
20000 pcs On Request 1 On Request On Request 1926+ On Request On Request
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request 23+ On Request On Request

DMP3018SSS-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMP3018SSS-13 Description

Short technical summary and product information.

The DMP3018SSS-13 is a P-Channel enhancement mode MOSFET designed for high-efficiency power management applications. It features a drain-source voltage (Vdss) of -30V, a continuous drain current of 10.5A at Tamb=25°C (25A at Tc=25°C), and a low on-resistance of 12mΩ maximum at Vgs=-10V, Id=11.5A. The device also offers low input capacitance (Ciss max 2714pF at Vds=15V) and a maximum gate charge of 57nC at Vgs=-10V, enabling fast switching.

 

The MOSFET is housed in an 8-SOIC (SO-8) surface-mount package, with matte tin annealed terminals. It is rated for an operating junction temperature range of -55°C to +150°C and a maximum power dissipation of 1.2W at 25°C ambient. The gate threshold voltage is 3V maximum (Id=250µA).

 

Applications include backlighting, power management functions, and DC-DC converters. The device is RoHS3 compliant, REACH unaffected, and halogen- and antimony-free.

DMP3018SSS-13 Quick Information

Product Type: MOSFET
Series: DMP3018SSS
Canonical Name: Diodes Incorporated DMP3018SSS-13 P-Channel Enhancement Mode MOSFET
Subcategory: Transistors - FETs, MOSFETs - Single

DMP3018SSS-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMP3018SSS-13 Estimated Pricing

Qty Low High
1+ $1.18 $1.18
10+ $0.73 $0.73
100+ $0.48 $0.48
2,500+ $0.48 $0.48

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP3018SSS-13 Features

  • Low on-resistance 12mΩ at Vgs=-10V.
  • Fast switching with 57nC gate charge.
  • 100% unclamped inductive switching tested.
  • Surface-mount 8-SOIC package.
  • RoHS3 compliant and halogen-free.

DMP3018SSS-13 Applications

  • Ideal for DC-DC converter circuits.
  • Suitable for backlighting applications.
  • Power management in portable devices.
  • Used in load switch designs.

DMP3018SSS-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMP3018SSS-13?

-30V

What is the maximum continuous drain current?

10.5A at Ta=25°C (steady state) and 25A at Tc=25°C (steady state) with Vgs=-10V.

What is the on-resistance of this MOSFET?

Maximum 12mΩ at Vgs=-10V, Id=11.5A; maximum 21mΩ at Vgs=-4.5V, Id=8A.

What package does the DMP3018SSS-13 come in?

8-SOIC (0.154", 3.90mm Width), also referred to as SO-8.

What is the operating temperature range?

-55°C to +150°C (junction temperature).

Is the DMP3018SSS-13 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free per the datasheet.

What is the gate threshold voltage?

Maximum 3V at Vds=Vgs, Id=250µA.

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