DMP3012LPS-13

The DMP3012LPS-13 is a P-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for applications such as notebook battery power management, DC-DC converters, and load switching. The device provides a drain-to-source voltage rating of -30 V and a continuous drain current of up to 13.2 A at TA=25°C with VGS=-10V. On-resistance is as low as 9 mΩ at VGS=-10V and 12 mΩ at VGS=-4.5V, which minimizes conduction losses. The gate-source voltage is rated to ±20 V, and the gate threshold voltage is 2.1 V maximum at 250 µA. The device also features a pulsed drain current rating of -100 A and an avalanche energy rating of 292 mJ, supporting robust operation in demanding switching applications.

This MOSFET offers low input capacitance (6807 pF max at Vds=15V) and fast switching speed. It is qualified to AEC-Q101 standards for high reliability and is ESD protected up to 1 kV (HBM). The POWERDI5060-8 package is thermally efficient and has a low profile (<1.1 mm), suitable for space-constrained designs. The device is surface mountable and is available in tape-and-reel packaging with 2500 pieces per reel.

The DMP3012LPS-13 is fully RoHS compliant, lead-free, and halogen- and antimony-free, making it suitable for environmentally conscious designs. Its operating junction temperature range is -55°C to +150°C. With its combination of low on-resistance, fast switching, and compact package, this MOSFET is well suited for power management circuits, load switches, and DC-DC converters.