DMP2900UDW-7 DMP2900UDW-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated. It features 20V drain-source voltage, 630mA continuous drain current, and low on-resistance of 750mΩ at 4.5V gate drive.
Mfr Part #:

DMP2900UDW-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMP2900UDW-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated. It features 20V drain-source voltage, 630mA continuous drain current, and low on-resistance of 750mΩ at 4.5V gate drive.
✓ Total Stock: 85,020 pcs
$ Price Range: $0.09 - $0.34

DMP2900UDW-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
85,020 pcs
85020 pcs On Request 1 On Request On Request On Request On Request On Request

DMP2900UDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
Weight

DMP2900UDW-7 Description

Short technical summary and product information.

The DMP2900UDW-7 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for low on-state resistance and efficient switching performance, making it suitable for power management in battery-operated systems.

 

The device has a drain-source voltage rating of 20V and a continuous drain current of 630mA at 25°C ambient. The maximum on-resistance is 750mΩ at Vgs=-4.5V and 1.05Ω at Vgs=-2.5V. It features low input capacitance of 49pF and low gate charge of 0.7nC, enabling fast switching. The gate threshold voltage is 1V maximum at 250µA.

 

The MOSFET is housed in a surface-mount SOT-363 package (6-TSSOP, SC-88, SOT-363) with a molded plastic case rated UL 94V-0. It is RoHS3 compliant, halogen and antimony free, and has MSL Level 1 moisture sensitivity. The device is supplied in tape and reel packaging with 3000 units per reel.

 

Typical applications include battery-operated systems, solid-state relays, and driver circuits for relays, solenoids, lamps, and displays. The dual configuration allows for compact designs in space-constrained applications.

DMP2900UDW-7 Quick Information

Product Type: Dual P-Channel MOSFET
Canonical Name: DMP2900UDW-7 Dual P-Channel Enhancement Mode MOSFET
Subcategory: MOSFET Arrays

DMP2900UDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMP2900UDW-7 Estimated Pricing

Qty Low High
1+ $0.34 $0.34
10+ $0.21 $0.21
100+ $0.13 $0.13
500+ $0.10 $0.10
1,000+ $0.09 $0.09
3,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP2900UDW-7 Features

  • Dual P-channel enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 630mA continuous drain current.
  • Low on-resistance: 750mΩ at 4.5V.
  • Surface-mount SOT-363 package.

DMP2900UDW-7 Applications

  • Battery operated systems and solid-state relays.
  • Driver circuits for relays, solenoids, lamps.
  • Power supply converter circuits.
  • Complementary pair MOSFET applications.

DMP2900UDW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

20V.

What is the maximum continuous drain current?

630mA at 25°C ambient.

What is the on-resistance at 4.5V gate drive?

750mΩ maximum at Id=430mA, Vgs=-4.5V.

What is the operating temperature range?

-55°C to 150°C (junction).

What package is this MOSFET available in?

SOT-363 (6-TSSOP, SC-88, SOT-363).

Is the device RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the gate threshold voltage?

1V maximum at 250µA.

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