| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
110 pcs
|
110 pcs | On Request | 1 | On Request | On Request | 1211+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This DMP210DUFB4-7B is a P-Channel MOSFET from Diodes Incorporated, designed for low-power applications. It features a drain-source voltage rating of 20V and a continuous drain current of 200mA.
Electrical characteristics include a maximum on-resistance of 5 Ohm at 100mA drain current and 4.5V gate drive. The gate threshold voltage is 1V maximum. Input capacitance is 175pF at 15V drain-source. The device supports drive voltages of 1.2V and 4.5V, with a maximum gate-source voltage of ±10V. Power dissipation is rated at 350mW.
The MOSFET is offered in a surface mount 3-XFDFN package, with supplier device package X2-DFN1006-3. It operates over a junction temperature range of -55°C to 150°C.
Compliance information: RoHS3 compliant, MSL level 1 (unlimited), and REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 10,000+ | $0.04 | $0.04 |
| 20,000+ | $0.03 | $0.03 |
| 30,000+ | $0.03 | $0.03 |
| 50,000+ | $0.03 | $0.03 |
| 70,000+ | $0.03 | $0.03 |
| 100,000+ | $0.03 | $0.03 |
| 250,000+ | $0.03 | $0.03 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
20V.
3-XFDFN surface mount package, supplier device package X2-DFN1006-3.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
200mA (Ta).
5 Ohm maximum at 100mA drain current and 4.5V gate voltage.