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DMP210DUFB4-7 P-Channel MOSFET with 20V drain-source breakdown voltage and 200mA continuous drain current. Features low on-resistance of 5 Ohm at 4.5V gate drive.
Mfr Part #:

DMP210DUFB4-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel MOSFET with 20V drain-source breakdown voltage and 200mA continuous drain current. Features low on-resistance of 5 Ohm at 4.5V gate drive.
✓ Total Stock: 10,852 pcs
$ Price Range: $0.25

DMP210DUFB4-7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Seba Components ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
4,468 pcs
On Request
4468 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
384 pcs
On Request
384 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMP210DUFB4-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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DMP210DUFB4-7 Description

Short technical summary and product information.

The DMP210DUFB4-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated, designed for low-power switching applications. It offers a drain-source voltage of 20V and a continuous drain current of 200mA.

 

Key electrical characteristics include a maximum on-resistance of 5 Ohm at Vgs=4.5V and Id=100mA, and a gate threshold voltage of 1V at Id=250µA. The device features low input capacitance of 175pF at Vds=15V, enabling efficient switching.

 

The MOSFET is housed in a compact X2-DFN1006-3 surface mount package (3-XFDFN), suitable for space-constrained designs. It supports a wide operating temperature range from -55°C to 150°C and has a maximum power dissipation of 350mW.

 

Typical applications include load switching, power management in portable devices, and battery protection circuits. The device is RoHS3 compliant and has an MSL of 1 (unlimited).

DMP210DUFB4-7 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: DMP210DUFB4-7 P-Channel MOSFET
Subcategory: Single MOSFET

DMP210DUFB4-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMP210DUFB4-7 Estimated Pricing

Qty Low High
1+ $0.25 $0.25

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP210DUFB4-7 Features

  • P-Channel MOSFET with 20V drain-source voltage.
  • 200mA continuous drain current rating.
  • Low on-resistance of 5 Ohm at 4.5V gate drive.
  • Compact X2-DFN1006-3 surface mount package.
  • Wide operating temperature range -55°C to 150°C.

DMP210DUFB4-7 Applications

  • Ideal for load switching in portable devices.
  • Used in battery protection circuits.
  • Suitable for power management in low-voltage systems.

DMP210DUFB4-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction temperature).

What package does the DMP210DUFB4-7 come in?

3-XFDFN surface mount package, also known as X2-DFN1006-3.

Is the DMP210DUFB4-7 RoHS compliant?

RoHS3 Compliant (unverified).

What is the drain-source voltage rating?

20V.

What is the maximum drain current?

200mA.

What is the on-resistance?

5 Ohm maximum at Id=100mA, Vgs=4.5V.

What is the gate threshold voltage?

1V maximum at Id=250µA.

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