DMP2070UCB6-7 P-Channel MOSFET with 20V drain-source voltage and 2.5A continuous drain current. Designed for low-voltage switching applications in a compact U-WLB1510-6 surface-mount package.
Mfr Part #:

DMP2070UCB6-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel MOSFET with 20V drain-source voltage and 2.5A continuous drain current. Designed for low-voltage switching applications in a compact U-WLB1510-6 surface-mount package.
✓ Total Stock: 7,250 pcs

DMP2070UCB6-7 Available from 1 distributor

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✓ Non-Authorised
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Non-Authorised Inventory information
7,250 pcs
7250 pcs On Request 1 On Request On Request 16+ On Request On Request

DMP2070UCB6-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMP2070UCB6-7 Description

Short technical summary and product information.

The DMP2070UCB6-7 is a P-Channel MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current of 2.5A (Ta). The device offers a low on-resistance of 70mΩ at 1A drain current and 4.5V gate-source voltage. The gate threshold voltage is 1V maximum at 250µA, enabling low-voltage drive. The MOSFET has a maximum gate charge of 2.9nC at 4.5V and an input capacitance of 210pF at 10V drain-source voltage.

 

Designed for efficient power management, the device supports a drive voltage range of 1.5V to 4.5V for optimized Rds(on). Maximum gate-source voltage is ±8V. Power dissipation is rated at 920mW (Ta). The operating junction temperature range is -55°C to 150°C.

 

The MOSFET is surface-mount packaged in a 6-UFBGA, WLBGA case with supplier device package U-WLB1510-6. It is suitable for load switching, battery protection, and power management in portable electronics.

DMP2070UCB6-7 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel MOSFET, 20V, 2.5A, U-WLB1510-6
Subcategory: Single P-Channel MOSFETs

DMP2070UCB6-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

DMP2070UCB6-7 Features

  • P-Channel MOSFET for low-voltage switching.
  • Rated for 20V drain-source voltage.
  • Continuous drain current of 2.5A.
  • Low on-resistance of 70mΩ.
  • Compact U-WLB1510-6 surface-mount package.

DMP2070UCB6-7 Applications

  • Used in load switching applications.
  • Ideal for power management in portable devices.
  • Suitable for battery protection circuits.
  • Designed for low-voltage DC/DC converters.

DMP2070UCB6-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The maximum drain-source voltage (Vdss) is 20V.

What package is the DMP2070UCB6-7 available in?

It is available in a 6-UFBGA, WLBGA package with supplier device package U-WLB1510-6.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this component RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this data is unverified and low confidence.

What is the maximum continuous drain current?

The maximum continuous drain current (at Ta) is 2.5A.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 70mOhm at 1A drain current and 4.5V gate-source voltage.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at 250µA drain current.

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