| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMP2042UCB4-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated. It is designed for low voltage switching applications with a drain-source voltage (Vdss) of 20V and continuous drain current (Id) of 4.6A at 25°C ambient temperature. The device features a low on-resistance (Rds(on)) of 45mOhm maximum at Vgs=4.5V and Id=1A, enabling efficient power management.
The MOSFET has a gate threshold voltage (Vgs(th)) of 1.2V maximum at Id=250µA, allowing for logic-level drive capability. The gate charge (Qg) is 2.5nC maximum at Vgs=4.5V, and input capacitance (Ciss) is 218pF maximum at Vds=10V, contributing to fast switching performance. The maximum power dissipation is 1.4W.
This device is housed in a compact 4-UFBGA (WLBGA) surface mount package with supplier device package U-WLB1010-4. It operates over a junction temperature range of -55°C to 150°C. The part is listed as RoHS3 compliant, REACH unaffected, and has an MSL level of 1 (unlimited).
The drain-source voltage (Vdss) is 20V.
The package is 4-UFBGA, WLBGA with supplier device package U-WLB1010-4.
The operating junction temperature range is -55°C to 150°C.
Yes, it is listed as RoHS3 Compliant.
The maximum gate threshold voltage (Vgs(th)) is 1.2V at Id=250µA.
The maximum input capacitance (Ciss) is 218pF at Vds=10V.
The mounting type is Surface Mount.