DMP2012SN-7 P-Channel enhancement mode MOSFET with 20V drain-source voltage and 900mA continuous drain current. Features low on-resistance of 300mOhm at 4.5V gate drive.
Mfr Part #:

DMP2012SN-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
P-Channel enhancement mode MOSFET with 20V drain-source voltage and 900mA continuous drain current. Features low on-resistance of 300mOhm at 4.5V gate drive.
✓ Total Stock: 8,000 pcs
$ Price Range: $0.12 - $0.62

DMP2012SN-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
5,000 pcs
5000 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request 18+ On Request On Request

DMP2012SN-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMP2012SN-7 Description

Short technical summary and product information.

The DMP2012SN-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated designed for low on-state resistance and efficient switching. It has a maximum drain-source voltage of 20V and a continuous drain current of 900mA at 25°C. The device offers a low on-resistance of 300mOhm at Vgs = -4.5V and Id = -0.9A, and 500mOhm at Vgs = -2.5V and Id = -0.7A.

 

This MOSFET features a low gate threshold voltage of 1.2V maximum at 250µA drain current, enabling logic-level gate drive. It has a maximum input capacitance of 178.5pF at Vds = 10V, supporting fast switching speeds. The gate is ESD protected.

 

The device is housed in a surface-mount SC-59 package (also known as TO-236-3 or SOT-23-3) with a molded plastic green molding compound. It is rated for operation from -55°C to 150°C junction temperature and has a maximum power dissipation of 500mW. The part is lead-free, RoHS compliant, and halogen and antimony free.

DMP2012SN-7 Quick Information

Product Type: MOSFET
Canonical Name: DMP2012SN-7 P-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMP2012SN-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMP2012SN-7 Estimated Pricing

Qty Low High
1+ $0.62 $0.62
10+ $0.38 $0.38
25+ $0.32 $0.32
50+ $0.28 $0.28
100+ $0.24 $0.24
3,000+ $0.14 $0.14
9,000+ $0.12 $0.12

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP2012SN-7 Features

  • P-Channel enhancement mode MOSFET.
  • 20V drain-source voltage rating.
  • 900mA continuous drain current.
  • Low on-resistance of 300mOhm.
  • ESD protected gate for reliability.

DMP2012SN-7 Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management functions.
  • Suitable for battery-powered devices.
  • Works in load switching applications.

DMP2012SN-7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the package type of the DMP2012SN-7?

The DMP2012SN-7 is available in an SC-59 surface-mount package, also known as TO-236-3 or SOT-23-3.

What is the operating temperature range of this MOSFET?

The DMP2012SN-7 has an operating junction temperature range of -55°C to 150°C.

Is the DMP2012SN-7 RoHS compliant?

Yes, the DMP2012SN-7 is RoHS3 compliant and lead-free as stated in the datasheet.

What is the maximum drain-source voltage for the DMP2012SN-7?

The maximum drain-source voltage (Vdss) is 20V.

What is the continuous drain current rating of the DMP2012SN-7?

The continuous drain current is 900mA at 25°C ambient temperature.

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