| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,170 pcs
|
4170 pcs | On Request | 1 | On Request | On Request | 2016 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMP2006UFG-13 is a P-Channel enhancement-mode MOSFET from Diodes Incorporated. It is designed for low-voltage power management and load switching applications.
The device offers a maximum drain-source voltage of 20V and can sustain continuous drain currents up to 17.5A at 25°C ambient temperature (Ta) and 40A at case temperature (Tc). The maximum on-resistance is 5.5mOhm at Vgs = 4.5V and Id = 15A. Gate charge is 200nC at Vgs = 10V, and input capacitance is 7500pF at Vds = 10V.
The MOSFET is housed in a surface-mount 8-PowerVDFN package (PowerDI3333-8) and operates over a junction temperature range of -55°C to 150°C. The maximum power dissipation is 2.3W at Ta.
The maximum drain-source voltage (Vdss) is 20 V.
The maximum drain current is 17.5 A at ambient temperature (Ta) and 40 A at case temperature (Tc).
The maximum Rds On is 5.5 mOhm at Id = 15 A and Vgs = 4.5 V.
The device is housed in an 8-PowerVDFN (PowerDI3333-8) surface-mount package.
The junction operating temperature range is -55°C to 150°C.