DMP1046UFDB-7 Dual P-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 12V drain-source voltage, 3.8A continuous drain current, and low on-resistance down to 61mΩ.
Mfr Part #:

DMP1046UFDB-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual P-Channel Enhancement Mode MOSFET from Diodes Incorporated. Features 12V drain-source voltage, 3.8A continuous drain current, and low on-resistance down to 61mΩ.
✓ Total Stock: 46,020 pcs
$ Price Range: $0.16 - $0.77

DMP1046UFDB-7 Available from 1 distributor

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✓ Non-Authorised
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DMP1046UFDB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Height (Max)
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight

DMP1046UFDB-7 Description

Short technical summary and product information.

The DMP1046UFDB-7 is a dual P-Channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed for low on-state resistance (RDS(on)) while maintaining superior switching performance, making it suitable for high-efficiency power management applications.

 

Key electrical characteristics include a drain-source voltage (Vdss) of 12V, maximum continuous drain current of 3.8A at Vgs=-4.5V, and maximum on-resistance of 61mΩ at Vgs=-4.5V. The device features low input capacitance (915pF at Vds=6V) and a gate charge of 17.9nC at Vgs=8V. The maximum gate threshold voltage is 1V at Id=250µA.

 

The MOSFET is housed in a compact 6-UDFN exposed pad package (U-DFN2020-6 Type B) with a low profile of 0.6mm maximum height. It supports surface mount assembly and is supplied in tape and reel packaging with 3000 units per reel. The device is rated for operation over a temperature range of -55°C to 150°C and has a power dissipation of 1.4W.

 

Environmental compliance includes RoHS3 compliance, lead-free construction, and halogen and antimony free (green device). Moisture sensitivity level is Level 1 per J-STD-020.

DMP1046UFDB-7 Quick Information

Product Type: Dual P-Channel MOSFET
Canonical Name: Dual P-Channel Enhancement Mode MOSFET
Subcategory: Dual P-Channel

DMP1046UFDB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMP1046UFDB-7 Estimated Pricing

Qty Low High
1+ $0.77 $0.77
10+ $0.48 $0.48
25+ $0.40 $0.40
50+ $0.35 $0.35
100+ $0.31 $0.31
3,000+ $0.18 $0.18
9,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP1046UFDB-7 Features

  • Dual P-Channel enhancement mode MOSFET.
  • Low on-resistance: 61mΩ maximum at 4.5V.
  • Low profile package: 0.6mm maximum height.
  • RoHS3 compliant and halogen free.
  • Operating temperature range: -55°C to 150°C.

DMP1046UFDB-7 Applications

  • Ideal for load switch applications in portable electronics.
  • Used in power management functions for battery-powered devices.
  • Suitable for portable power adaptors and DC-DC converters.
  • Can be used in high-efficiency power management circuits.

DMP1046UFDB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating voltage (drain-source voltage) of the DMP1046UFDB-7?

The drain-source voltage (Vdss) is 12V.

What is the package type of the DMP1046UFDB-7?

The package is 6-UDFN Exposed Pad (U-DFN2020-6 Type B).

What is the operating temperature range?

-55°C to 150°C.

Is the DMP1046UFDB-7 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum continuous drain current?

Maximum drain current is 3.8A at Vgs=-4.5V, 3.3A at -2.5V, and 2.8A at -1.8V.

What is the on-resistance (Rds(on)) of this MOSFET?

Maximum Rds(on) is 61mΩ at Vgs=-4.5V, 81mΩ at -2.5V, and 115mΩ at -1.8V.

What is the gate threshold voltage?

Maximum gate threshold voltage (Vgs(th)) is 1V at Id=250µA.

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