| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,113 pcs
|
2113 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Footprint | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Height | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The DMP1012UCB9-7 is a P-Channel Enhancement Mode MOSFET from Diodes Incorporated, built on third-generation Lateral MOSFET (LD-MOS) technology. It is designed to minimize on-state losses and enable ultra-fast switching, making it suitable for high-efficiency power transfer applications. The device delivers a maximum drain-source voltage of -8V and a continuous drain current of 10A at 25°C.
Key electrical characteristics include a typical drain-source on-resistance of 8.2mOhm at VGS = -4.5V and a total gate charge of 8.1nC, which supports fast switching transitions. The gate threshold voltage is typically -0.8V for low turn-on potential. The MOSFET is also rated for ESD protection of 6kV HBM on the gate.
The device is housed in a compact U-WLB1515-9 chip-scale package (CSP) with a 1.5mm x 1.5mm footprint and a height of 0.62mm. It is surface mount and supplied in tape and reel packaging with a quantity of 3000 pieces per reel. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.35 | $0.35 |
| 9,000+ | $0.32 | $0.32 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -8V.
The maximum continuous drain current is 10A at 25°C ambient temperature.
The typical drain-source on-resistance is 8.2mOhm at VGS = -4.5V.
It is available in a 9-UFBGA, WLBGA package, specifically the U-WLB1515-9 chip-scale package.
The operating junction temperature range is -55°C to +150°C.
Yes, it is fully RoHS3 compliant and totally lead-free.
The typical total gate charge is 8.1nC at VGS = -4.5V.