DMP1008UCB9-7 DMP1008UCB9-7 is a P-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features -8V Vds, -9.8A Id, and 5.7mΩ Rds(on) in a compact U-WLB1515-9 package.
Mfr Part #:

DMP1008UCB9-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMP1008UCB9-7 is a P-Channel Enhancement Mode MOSFET from Diodes Incorporated. It features -8V Vds, -9.8A Id, and 5.7mΩ Rds(on) in a compact U-WLB1515-9 package.
✓ Total Stock: 3,000 pcs
$ Price Range: $0.32 - $0.35

DMP1008UCB9-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

DMP1008UCB9-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMP1008UCB9-7 Description

Short technical summary and product information.

The DMP1008UCB9-7 is a P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It utilizes advanced LD-MOS technology to achieve low on-state resistance and fast switching performance. Key electrical characteristics include a drain-source voltage rating of -8V, continuous drain current of -9.8A at 25°C, and a maximum on-resistance of 5.7mΩ at VGS = -4.5V. The device features a typical threshold voltage of -0.6V and a gate charge of 8.2nC, enabling efficient high-frequency operation.

 

This MOSFET is designed for applications such as DC-DC converters, battery management, and load switching. Its low figure of merit (RDS(on) × Qg) minimizes power losses and improves system efficiency. The device includes ESD protection on the gate for enhanced robustness.

 

The DMP1008UCB9-7 is housed in a U-WLB1515-9 (Type F) chip-scale package with a footprint of 1.5mm × 1.5mm and a low profile of 0.60mm. It is surface-mountable and supports a standard tape and reel packaging of 3,000 units. The operating temperature range is -55°C to 150°C. The device is RoHS3 compliant, lead-free, and halogen-free (Green).

DMP1008UCB9-7 Quick Information

Product Type: P-Channel MOSFET
Canonical Name: DMP1008UCB9-7 P-Channel Enhancement Mode MOSFET
Subcategory: P-Channel MOSFET

DMP1008UCB9-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMP1008UCB9-7 Estimated Pricing

Qty Low High
3,000+ $0.35 $0.35
9,000+ $0.32 $0.32

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMP1008UCB9-7 Features

  • P-Channel enhancement mode MOSFET with -8V Vds.
  • Low on-resistance of 5.7mΩ at VGS = -4.5V.
  • Ultra-fast switching with 8.2nC gate charge.
  • Compact U-WLB1515-9 chip-scale package.
  • ESD protection on gate for improved reliability.

DMP1008UCB9-7 Applications

  • Ideal for DC-DC converter circuits.
  • Used in battery management systems.
  • Suitable for load switch applications.
  • High-efficiency power transfer designs.

DMP1008UCB9-7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMP1008UCB9-7?

The drain-source voltage rating is -8V (P-channel).

What package does the DMP1008UCB9-7 come in?

It comes in a U-WLB1515-9 (Type F) chip-scale package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is the DMP1008UCB9-7 RoHS compliant?

Yes, it is RoHS3 compliant, lead-free, and halogen-free (Green).

What is the maximum continuous drain current?

-9.8A at 25°C (VGS = -4.5V).

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