| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,483 pcs
|
1483 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMP1007UCB9-7 is a P-Channel enhancement mode MOSFET (Metal Oxide) from Diodes Incorporated, designed for high-efficiency power management. It features a drain-source voltage (Vdss) of 8V and a continuous drain current of 13.2A at 25°C. The device achieves an ultra-low on-resistance (RDS(on)) of 5.7mΩ at Vgs=4.5V and Id=2A, minimizing conduction losses.
This MOSFET utilizes advanced lateral DMOS technology to achieve ultra-fast switching with low gate charge (Qg=8.2nC at Vgs=4.5V) and low input capacitance (Ciss=900pF at Vds=4V). It includes ESD protection on the gate for robustness. The device is ideal for applications such as DC-DC converters, battery management, and load switching.
The DMP1007UCB9-7 is housed in a compact 9-UFBGA, WLBGA package (U-WLB1515-9 Type C) with a footprint of 1.5mm x 1.5mm and a height of 0.62mm, making it suitable for space-constrained designs. It is surface mountable and comes in tape and reel packaging (3,000/reel). The device is fully RoHS3 compliant, lead-free, halogen and antimony free, and meets MSL Level 1 per J-STD-020. Terminal finish is SnAgCu with solderability per MIL-STD-202 Method 208. Weight is 0.0018 grams.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.47 | $1.47 |
| 10+ | $0.92 | $0.92 |
| 25+ | $0.77 | $0.77 |
| 50+ | $0.68 | $0.68 |
| 100+ | $0.61 | $0.61 |
| 3,000+ | $0.37 | $0.37 |
| 9,000+ | $0.33 | $0.33 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) is 8V.
It is available in a 9-UFBGA, WLBGA package (U-WLB1515-9 Type C).
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and lead-free.
13.2A at 25°C ambient temperature.
8.2nC at Vgs=4.5V.
Yes, the gate includes ESD protection.