| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
211,020 pcs
|
211020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| ESD Protection | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Termination Finish | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMP1005UFDF-7 is a P-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 12V and a continuous drain current of 26A at 25°C case temperature. The device offers low on-resistance of 8.5mΩ at Vgs=4.5V and 12mΩ at Vgs=2.5V, making it suitable for high-efficiency power management applications. The MOSFET is ESD protected up to 8kV (HBM) and has a low gate threshold voltage of 1V. It is housed in a compact U-DFN2020-6 (Type F) surface mount package with an exposed pad for improved thermal performance. The package has a 0.6mm profile and a PCB footprint of 4mm². The device is RoHS3 compliant, lead-free, and halogen-free. Typical applications include battery management, power management functions, and load switches.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.06 | $1.06 |
| 10+ | $0.66 | $0.66 |
| 25+ | $0.55 | $0.55 |
| 50+ | $0.49 | $0.49 |
| 100+ | $0.43 | $0.43 |
| 3,000+ | $0.26 | $0.26 |
| 9,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
12V.
6-UDFN Exposed Pad (U-DFN2020-6 Type F).
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant.
26A at Tc=25°C.
1V max at Id=250µA.
12mΩ max at Id=22A.