| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,400 pcs
|
2400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMNH6042SK3Q-13 is a 60V N-Channel enhancement mode power MOSFET from Diodes Incorporated, designed for rugged automotive and industrial applications. It features a maximum continuous drain current of 25A at Tc = +25°C and a pulsed drain current capability of 40A, making it suitable for demanding switching tasks.
The device offers low on-resistance: 50mΩ maximum at VGS = 10V (ID = 6A) and 65mΩ maximum at VGS = 4.5V. The low input capacitance (584pF typical at VDS = 25V) and low gate charge (8.8nC at VGS = 10V) enable efficient high-frequency switching with reduced drive requirements.
This MOSFET supports 100% unclamped inductive switching (UIS) testing for ensured avalanche ruggedness, with a rated single-pulse avalanche energy of 65mJ at L = 10mH and IAS = 3.5A. It is housed in a surface-mount TO252 (DPAK) package with a molded plastic body rated UL 94V-0, and features a matte tin annealed finish over a copper leadframe.
The part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it well-suited for automotive subsystems such as solenoid drivers, relay drivers, and power management functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.61 | $1.61 |
| 10+ | $1.01 | $1.01 |
| 25+ | $0.85 | $0.85 |
| 50+ | $0.75 | $0.75 |
| 100+ | $0.67 | $0.67 |
| 2,500+ | $0.40 | $0.40 |
| 7,500+ | $0.35 | $0.35 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (BVDSS) is 60 V.
The maximum continuous drain current is 25 A at a case temperature (Tc) of +25°C.
Yes, the DMNH6042SK3Q-13 is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The operating junction temperature range is -55°C to +175°C.
The device is housed in a TO252 (DPAK) package and designed for surface mount mounting. The supplier device package is TO-252-3.
Yes, the device is RoHS3 compliant, has a lead-free matte tin finish, and is halogen and antimony free (green device).
The maximum gate charge is 8.8 nC at a gate-to-source voltage of 10 V.