| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,020 pcs
|
51020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMNH6012LK3-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive and high-reliability applications. It is qualified to AEC-Q101 standards.
With a maximum drain-source voltage of 60V and continuous drain current of 60A at Tc=25°C, it offers low on-resistance of 12mΩ at Vgs=10V and 18mΩ at Vgs=4.5V. The device features a maximum gate threshold voltage of 3V at Id=250µA and total gate charge of 35.2nC at Vgs=10V. Input capacitance is 1926pF at Vds=30V.
The MOSFET is housed in a surface-mount TO-252-3 (DPak) package with matte tin finish over copper leadframe. It has a maximum power dissipation of 2W at Ta=25°C and 3.8W at Tc=25°C, with an operating junction temperature range of -55°C to 175°C. The device is RoHS3 compliant, halogen-free, and MSL Level 1.
Ideal for body control electronics, DC/DC converters, and other automotive systems requiring high efficiency and reliability.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.56 | $0.56 |
| 7,500+ | $0.54 | $0.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TO-252-3 (DPak) surface-mount package.
-55°C to 175°C junction temperature.
Yes, it is RoHS3 compliant with lead-free finish.
Maximum total gate charge is 35.2 nC at Vgs=10V.
18 mΩ maximum at Vgs=4.5V, Id=50A.
Yes, it is AEC-Q101 qualified.