| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
DMNH10H028SCT is an N-Channel enhancement mode MOSFET from Diodes Incorporated, with a drain-source voltage of 100V and continuous drain current of 60A at Tc=25°C. It is designed for high efficiency power management applications.
Electrical characteristics include low on-resistance of 28 mΩ max at Vgs=10V and Id=20A, low gate charge of 31.9 nC, and input capacitance of 1942 pF. Rated for operation up to 175°C junction temperature.
Available in a TO-220-3 (TO220AB) through-hole package. It is RoHS compliant, halogen-free, and qualified to AEC-Q101 standards for automotive applications.
Ideal for motor control, backlighting, DC-DC converters, and power management functions.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.53 | $2.53 |
| 10+ | $1.61 | $1.61 |
| 25+ | $1.37 | $1.37 |
| 50+ | $1.22 | $1.22 |
| 100+ | $1.09 | $1.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
100V.
TO-220-3 (TO220AB).
-55°C to +175°C.
Yes, RoHS3 compliant.
28 mΩ maximum at Vgs=10V and Id=20A.
31.9 nC at Vgs=10V.
60A at Tc=25°C.