DMN66D0LDW-7 Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 115mA continuous drain current, and 6 Ohm on-resistance at 5V gate drive.
Mfr Part #:

DMN66D0LDW-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 115mA continuous drain current, and 6 Ohm on-resistance at 5V gate drive.
✓ Total Stock: 42,910 pcs
$ Price Range: $0.22 - $1.05

DMN66D0LDW-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
32,890 pcs
32890 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
10,020 pcs
10020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN66D0LDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

DMN66D0LDW-7 Description

Short technical summary and product information.

The DMN66D0LDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for low-power switching and power management applications. It features a drain-source voltage rating of 60V and a continuous drain current of 115mA. On-resistance is 6 Ohm maximum at Vgs=5V and 5 Ohm at Vgs=10V, with a low gate threshold voltage of 2V max at 250µA. Input capacitance is only 23pF at Vds=25V, enabling fast switching performance. Power dissipation is 250mW, and the device operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a compact SOT-363 surface-mount package (also compatible with 6-TSSOP and SC-88). It is RoHS3 compliant, halogen and antimony free, and rated MSL level 1 per J-STD-020. The gate is ESD protected to 1kV HBM. Typical applications include load switches, signal switching, and general-purpose power management in portable and battery-powered devices.

DMN66D0LDW-7 Quick Information

Product Type: Dual N-Channel MOSFET
Series: DMN66D0LDW
Canonical Name: DMN66D0LDW-7 Dual N-Channel MOSFET
Subcategory: MOSFET Arrays

DMN66D0LDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

DMN66D0LDW-7 Estimated Pricing

Qty Low High
1+ $1.05 $1.05
10+ $0.66 $0.66
25+ $0.55 $0.55
50+ $0.48 $0.48
100+ $0.43 $0.43
3,000+ $0.25 $0.25
9,000+ $0.22 $0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN66D0LDW-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • 60V drain-source voltage rating.
  • 115mA continuous drain current.
  • 6 Ohm on-resistance at 5V gate drive.
  • Low input capacitance of 23pF.

DMN66D0LDW-7 Applications

  • Ideal for load switching applications.
  • Used in power management circuits.
  • Suitable for signal switching.
  • Designed for high-efficiency systems.

DMN66D0LDW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What package is the DMN66D0LDW-7 available in?

6-TSSOP, SC-88, SOT-363; supplier device package SOT-363.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN66D0LDW-7 RoHS compliant?

Yes, RoHS3 compliant per datasheet.

What is the on-resistance?

6 Ohm max at Vgs=5V, Id=115mA.

What is the gate threshold voltage?

2V max at Id=250µA.

What is the input capacitance?

23pF max at Vds=25V.

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