DMN65D8LFB-7 N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 400mA continuous drain current, and low on-resistance of 3Ω at 10V gate drive.
Mfr Part #:

DMN65D8LFB-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 400mA continuous drain current, and low on-resistance of 3Ω at 10V gate drive.
✓ Total Stock: 19,020 pcs
$ Price Range: $0.06 - $0.34

DMN65D8LFB-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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19,020 pcs
19020 pcs On Request 1 On Request On Request On Request On Request On Request

DMN65D8LFB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN65D8LFB-7 Description

Short technical summary and product information.

The DMN65D8LFB-7 is a N-Channel enhancement mode field effect MOSFET from Diodes Incorporated. It is designed for low on-resistance and fast switching, making it suitable for high-efficiency power management applications. Key electrical specifications include a drain-source voltage (Vdss) of 60V, continuous drain current of 400mA at VGS=10V and TA=25°C, and a maximum on-resistance of 3Ω at VGS=10V and ID=115mA. The gate threshold voltage is 2V maximum at ID=250µA. The device features low input capacitance of 25pF typical at VDS=25V, and an ESD protected gate up to 1.2kV (HBM).

 

Thermal characteristics include a maximum power dissipation of 430mW at TA=25°C and an operating junction temperature range of -55°C to +150°C. The MOSFET is offered in a small X1-DFN1006-3 surface mount package, which is molded plastic with a green molding compound, UL 94V-0 flammability rating, and NiPdAu over copper leadframe finish. The device is supplied in tape and reel packaging with 3,000 pieces per reel.

 

Applications include DC-DC converters, power management functions, battery operated systems, solid-state relays, and drivers for relays, solenoids, lamps, and displays. The DMN65D8LFB-7 is fully RoHS3 compliant, lead-free, halogen and antimony free, and meets MSL Level 1 per J-STD-020.

DMN65D8LFB-7 Quick Information

Product Type: N-Channel MOSFET
Series: DMN65D8LFB
Canonical Name: N-Channel MOSFET, 60V Drain to Source, 400mA Continuous Drain Current, 3Ω On-Resistance, X1-DFN1006-3 Package
Subcategory: N-Channel

DMN65D8LFB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN65D8LFB-7 Estimated Pricing

Qty Low High
1+ $0.34 $0.34
10+ $0.21 $0.21
25+ $0.17 $0.17
50+ $0.15 $0.15
100+ $0.13 $0.13
3,000+ $0.07 $0.07
9,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN65D8LFB-7 Features

  • N-Channel enhancement mode MOSFET.
  • Low on-resistance: 3Ω at 10V gate drive.
  • Low input capacitance of 25pF.
  • ESD protected gate up to 1.2kV HBM.
  • Small X1-DFN1006-3 surface mount package.

DMN65D8LFB-7 Applications

  • Used in DC-DC converter circuits.
  • Power management functions in portable devices.
  • Battery operated systems and solid-state relays.
  • Relay, solenoid, lamp, and display drivers.

DMN65D8LFB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of this MOSFET?

60V.

What is the package type for this MOSFET?

X1-DFN1006-3 surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction temperature).

Is this MOSFET RoHS compliant?

Yes, it is fully RoHS3 compliant, lead-free, and halogen and antimony free.

What is the typical on-resistance (Rds(on))?

Maximum 3Ω at VGS=10V, ID=115mA; maximum 4Ω at VGS=5V.

What is the gate threshold voltage (Vgs(th))?

Maximum 2V at ID=250µA.

Does this MOSFET have ESD protection?

Yes, the gate is ESD protected to 1.2kV (HBM).

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