DMN63D8LV-7 Dual N-Channel Enhancement Mode MOSFET with 30V drain-source voltage and 260mA continuous drain current. Features low on-resistance and logic level gate, packaged in SOT-563.
Mfr Part #:

DMN63D8LV-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel Enhancement Mode MOSFET with 30V drain-source voltage and 260mA continuous drain current. Features low on-resistance and logic level gate, packaged in SOT-563.
✓ Total Stock: 1,451,815 pcs
$ Price Range: $0.06 - $0.34

DMN63D8LV-7 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,444,020 pcs
1444020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,782 pcs
4782 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,013 pcs
3013 pcs On Request 1 On Request On Request 18+ On Request On Request

DMN63D8LV-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMN63D8LV-7 Description

Short technical summary and product information.

The DMN63D8LV-7 is a dual N-channel enhancement mode MOSFET designed for low on-state resistance and fast switching performance. It is ideal for high-efficiency power-management applications.

 

Key electrical specifications include a drain-source voltage of 30V, continuous drain current of 260mA, and pulsed drain current of 200mA. On-resistance is typically 2.8 Ohm at VGS=10V and 4.2 Ohm at VGS=5V. The device features a logic level gate for low-voltage drive, low input capacitance of 22pF, and gate charge of 0.87nC. The gate is ESD protected for robust operation.

 

The MOSFET is housed in a SOT-563 surface-mount package with molded plastic and matte tin finish terminals. It weighs approximately 0.006 grams and is supplied in tape and reel packaging (3000 pieces). Operating junction temperature ranges from -55°C to 150°C.

 

Typical applications include DC-DC converters, power management functions, battery-operated systems, and drivers for relays, solenoids, lamps, and displays.

DMN63D8LV-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN63D8LV-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET

DMN63D8LV-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant

DMN63D8LV-7 Estimated Pricing

Qty Low High
1+ $0.34 $0.34
10+ $0.21 $0.21
25+ $0.17 $0.17
50+ $0.15 $0.15
100+ $0.13 $0.13
3,000+ $0.07 $0.07
9,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN63D8LV-7 Features

  • Dual N-Channel MOSFET in SOT-563 package.
  • Low on-resistance of 2.8 Ohm at 10V.
  • Logic level gate for 5V drive capability.
  • ESD protected gate for robust operation.
  • RoHS compliant and halogen free.

DMN63D8LV-7 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for battery-operated systems.
  • Drives relays, solenoids, and lamps.

DMN63D8LV-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range?

-55°C to 150°C (junction).

What package is the DMN63D8LV-7 available in?

SOT-563 (SOT-563, SOT-666).

Is the DMN63D8LV-7 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the maximum drain current?

260 mA continuous, 200 mA pulsed.

What is the gate threshold voltage?

Maximum 1.5V at 250µA.

Does it have ESD protection?

Yes, the gate is ESD protected.

What is the typical on-resistance?

2.8 Ohm at VGS=10V, 4.2 Ohm at VGS=5V.

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