DMN63D8LDWQ-7 DMN63D8LDWQ-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage rating and 220mA continuous drain current in a compact SOT-363 surface mount package.
Mfr Part #:

DMN63D8LDWQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN63D8LDWQ-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage rating and 220mA continuous drain current in a compact SOT-363 surface mount package.
✓ Total Stock: 724,020 pcs
$ Price Range: $0.07 - $0.37

DMN63D8LDWQ-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
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724,020 pcs
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DMN63D8LDWQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Finish
Vgs(th) (Max) @ Id
Weight

DMN63D8LDWQ-7 Description

Short technical summary and product information.

The DMN63D8LDWQ-7 is a dual N-Channel enhancement mode MOSFET designed for low on-state resistance while maintaining superior switching performance. It features a maximum drain-source voltage of 30V and a continuous drain current of 220mA. The device offers a maximum on-resistance of 2.8 ohms at 10V gate drive and 4.2 ohms typical at 4.5V gate drive.

 

This MOSFET is optimized for high efficiency power management applications, including DC-DC converters, power management functions, battery operated systems, and solid-state relays. It also serves as a driver for relays, solenoids, lamps, and other loads. The device features low input capacitance of 22pF and fast switching speed, making it suitable for high-frequency circuits.

 

The DMN63D8LDWQ-7 is housed in a small surface mount SOT-363 package, supplied in tape and reel packaging with 3000 units per reel. It has a maximum power dissipation of 300mW and an operating junction temperature range of -55°C to +150°C. The device is ESD protected, totally lead-free, RoHS3 compliant, and halogen and antimony free.

DMN63D8LDWQ-7 Quick Information

Product Type: Dual N-Channel Enhancement Mode MOSFET
Series: DMN63D8LDWQ
Canonical Name: DMN63D8LDWQ-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: FETs - Arrays

DMN63D8LDWQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

DMN63D8LDWQ-7 Estimated Pricing

Qty Low High
1+ $0.37 $0.37
10+ $0.22 $0.22
25+ $0.19 $0.19
50+ $0.16 $0.16
100+ $0.14 $0.14
3,000+ $0.08 $0.08
9,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN63D8LDWQ-7 Features

  • 30V maximum drain-source voltage rating.
  • 220mA continuous drain current capacity.
  • 2.8 ohm on-resistance at 10V gate drive.
  • Low input capacitance of 22pF at 25V.
  • SOT-363 surface mount package with tape and reel.

DMN63D8LDWQ-7 Applications

  • Used in DC-DC converter circuits.
  • Power management in battery operated systems.
  • Solid-state relay and driver applications.

DMN63D8LDWQ-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of DMN63D8LDWQ-7?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The maximum continuous drain current is 220mA.

What is the on-resistance at 10V gate drive?

The maximum on-resistance is 2.8 ohms at Id=250mA and Vgs=10V.

What package is DMN63D8LDWQ-7 available in?

It is available in a SOT-363 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

Is the DMN63D8LDWQ-7 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free.

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