DMN63D8LDW-7 The DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage, 220mA continuous drain current, and low on-resistance of 2.8 Ohm at 10V gate drive.
Mfr Part #:

DMN63D8LDW-7

Available from 5 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V drain-source voltage, 220mA continuous drain current, and low on-resistance of 2.8 Ohm at 10V gate drive.
✓ Total Stock: 278,721 pcs
$ Price Range: $0.05 - $0.30

DMN63D8LDW-7 Available from 5 distributors

✓ Authorised
✓ Non-Authorised

DMN63D8LDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
Weight

DMN63D8LDW-7 Description

Short technical summary and product information.

The DMN63D8LDW-7 is a dual N-channel enhancement mode MOSFET designed for low-power switching applications. It features low on-resistance, low input capacitance, fast switching speed, and an ESD protected gate. Typical applications include DC-DC converters, power management functions, battery operated systems, and relay/solenoid/lamp drivers.

 

Key electrical specifications: drain-source voltage 30V, continuous drain current 220mA (260mA at Vgs=10V), maximum on-resistance 2.8 Ohm at 250mA/10V and 4.2 Ohm at 4.5V. Gate charge is 0.87nC maximum, input capacitance 22pF maximum. The logic-level gate allows direct drive from low voltage logic.

 

The device is housed in a surface mount SOT-363 package with molded plastic case (UL 94V-0), matte tin finish over Alloy 42 leadframe. Weight is approximately 0.006 grams. Operating junction temperature range is -55°C to 150°C. The DMN63D8LDW-7 is RoHS3 compliant, REACH unaffected, lead-free, and halogen and antimony free.

DMN63D8LDW-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN63D8LDW-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel

DMN63D8LDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN63D8LDW-7 Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.18 $0.18
25+ $0.15 $0.15
50+ $0.13 $0.13
100+ $0.11 $0.11
3,000+ $0.06 $0.06
9,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN63D8LDW-7 Features

  • Dual N-channel enhancement mode MOSFET.
  • Low on-resistance of 2.8 Ohm at 10V.
  • Logic level gate for low voltage drive.
  • ESD protected gate for improved reliability.
  • Surface mount SOT-363 package.

DMN63D8LDW-7 Applications

  • Ideal for DC-DC converter circuits.
  • Used in battery operated systems.
  • Suitable for relay and solenoid drivers.
  • Power management in portable devices.

DMN63D8LDW-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

30V.

What is the continuous drain current?

220mA (260mA at Vgs=10V).

What is the on-resistance?

2.8 Ohm max at 250mA, 10V; 4.2 Ohm max at 4.5V.

What is the operating temperature range?

-55°C to 150°C (junction).

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What package is available?

SOT-363 surface mount.

What is the gate threshold voltage?

Maximum 1.5V at 250µA.

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