DMN63D8LDW-13 DMN63D8LDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V maximum drain-source voltage and 220mA continuous drain current in a SOT-363 surface mount package.
Mfr Part #:

DMN63D8LDW-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN63D8LDW-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features a 30V maximum drain-source voltage and 220mA continuous drain current in a SOT-363 surface mount package.
✓ Total Stock: 211,020 pcs
$ Price Range: $0.04 - $0.29

DMN63D8LDW-13 Available from 1 distributor

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✓ Non-Authorised
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211,020 pcs
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DMN63D8LDW-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
ESD Protection
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs(th) (Max) @ Id
Weight

DMN63D8LDW-13 Description

Short technical summary and product information.

The DMN63D8LDW-13 is a dual N-channel enhancement mode MOSFET designed for low on-resistance and fast switching. It has a maximum drain-source voltage of 30V and a continuous drain current of 220mA (nominal). The device features a logic level gate and ESD protected gate for robust operation.

 

Key electrical characteristics include a maximum on-resistance of 2.8Ω at VGS=10V and 4.2Ω at VGS=4.5V. The gate threshold voltage is 1.5V maximum at ID=250µA. Input capacitance is 22pF typical at VDS=25V, and total gate charge is 0.87nC at VGS=10V.

 

The MOSFET is housed in a SOT-363 surface mount package and is totally lead-free, halogen and antimony free, and RoHS3 compliant. It is suitable for DC-DC converters, power management functions, battery operated systems, and relay/solenoid drivers.

DMN63D8LDW-13 Quick Information

Product Type: Dual N-Channel Enhancement Mode MOSFET
Series: DMN63D8LDW
Canonical Name: DMN63D8LDW-13 Dual N-Channel Enhancement Mode MOSFET
Subcategory: MOSFET Arrays

DMN63D8LDW-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN63D8LDW-13 Estimated Pricing

Qty Low High
1+ $0.29 $0.29
10+ $0.18 $0.18
25+ $0.15 $0.15
50+ $0.13 $0.13
100+ $0.11 $0.11
10,000+ $0.05 $0.05
30,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN63D8LDW-13 Features

  • Dual N-channel enhancement mode MOSFET.
  • Maximum drain-source voltage of 30V.
  • Low on-resistance down to 2.8Ω.
  • ESD protected gate for robust operation.
  • Totally lead-free and RoHS3 compliant.

DMN63D8LDW-13 Applications

  • Ideal for DC-DC converter circuits.
  • Used in power management functions.
  • Suitable for battery operated systems.
  • Drives relays, solenoids, and lamps.

DMN63D8LDW-13 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN63D8LDW-13?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating of the DMN63D8LDW-13?

The nominal continuous drain current is 220mA. Under test conditions, it is 200mA at VGS=4.5V and 260mA at VGS=10V.

What is the on-resistance of the DMN63D8LDW-13?

The maximum on-resistance is 2.8Ω at VGS=10V and ID=250mA, and 4.2Ω at VGS=4.5V.

What is the operating temperature range of the DMN63D8LDW-13?

The operating temperature range is -55°C to +150°C (junction temperature).

Is the DMN63D8LDW-13 RoHS compliant?

Yes, the DMN63D8LDW-13 is RoHS3 compliant and totally lead-free.

What package does the DMN63D8LDW-13 come in?

The DMN63D8LDW-13 is available in a SOT-363 surface mount package.

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