Mfr Part #:

DMN62D1LFDQ-7

N-Channel enhancement mode MOSFET, 60V drain-source voltage, 400mA continuous drain current, surface mount package. RoHS3 compliant.

✓ Total Stock: 11,000 pcs

$ Price Range: $0.10 - $0.57

DMN62D1LFDQ-7 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	11,000 pcs On Request	11000 pcs	On Request	1	On Request	On Request	24+	On Request	On Request

DMN62D1LFDQ-7 Description

Short technical summary and product information.

The DMN62D1LFDQ-7 is an N-channel enhancement mode MOSFET designed for automotive applications. It features a 60V drain-source breakdown voltage and a continuous drain current of 400mA at 25°C. The device offers low on-resistance of 2Ω at VGS=4V and low input capacitance of 36pF, enabling fast switching. It is ESD protected with integrated gate protection diode. The MOSFET is qualified to AEC-Q101 and is suitable for backlighting, power management, and DC-DC converter applications. It comes in a compact U-DFN1212-3 surface mount package with NiPdAu termination finish. The device is RoHS3 compliant, lead-free, and halogen-free.

DMN62D1LFDQ-7 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: N-Channel MOSFET, 60V, 400mA, U-DFN1212-3

Subcategory: Single MOSFET

DMN62D1LFDQ-7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

DMN62D1LFDQ-7 Estimated Pricing

Qty	Low	High
1+	$0.57	$0.57
10+	$0.35	$0.35
25+	$0.29	$0.29
50+	$0.25	$0.25
100+	$0.22	$0.22
3,000+	$0.12	$0.12
9,000+	$0.10	$0.10

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN62D1LFDQ-7 Features

N-channel enhancement mode MOSFET with 60V drain-source voltage.
Low on-resistance of 2 Ohm at 4V gate drive.
Compact U-DFN1212-3 surface mount package.
AEC-Q101 qualified for automotive applications.
RoHS3 compliant, lead-free and halogen-free.

DMN62D1LFDQ-7 Applications

Ideal for backlighting and power management functions.
Used in DC-DC converter circuits.
Suitable for low-voltage switching applications.
Designed for automotive electronics requiring AEC-Q101.

DMN62D1LFDQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of the DMN62D1LFDQ-7?

The package is U-DFN1212-3 (Type C).

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is this device RoHS compliant?

Yes, it is RoHS3 compliant (EU Directive 2011/65/EU and 2015/863/EU).

What is the maximum drain-source voltage?

The maximum drain-source voltage (BVDSS) is 60V.

What is the continuous drain current rating?

Continuous drain current is 400mA at VGS=4V and TA=25°C, and 310mA at TA=70°C.

What is the gate threshold voltage?

The maximum gate threshold voltage is 1V at ID=250µA.

Is the DMN62D1LFDQ-7 qualified for automotive use?

Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
AEC Qualified	Yes
Automotive Grade	Yes
Current	400mA (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
ESD Protection	Yes
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.55 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	36 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	2 Ohm
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	U-DFN1212-3 (Type C)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Termination Finish	NiPdAu over Copper Leadframe
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	1 V
Weight	0.005 g