DMN62D1LFD-13 N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 400mA continuous drain current, low on-resistance of 2 Ohm at 4V gate drive.
Mfr Part #:

DMN62D1LFD-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Features 60V drain-source voltage, 400mA continuous drain current, low on-resistance of 2 Ohm at 4V gate drive.
✓ Total Stock: 837 pcs
$ Price Range: $0.05 - $0.36

DMN62D1LFD-13 Available from 1 distributor

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✓ Non-Authorised
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DMN62D1LFD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN62D1LFD-13 Description

Short technical summary and product information.

The DMN62D1LFD-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. It is ideal for high efficiency power management applications such as DC-DC converters, power management functions, battery operated systems, solid-state relays, and drivers for relays, solenoids, lamps, displays, and memories.

 

Key electrical specifications include a drain-source voltage rating of 60V, continuous drain current of 400mA at 25°C ambient, and low on-resistance of 2 Ohm at 4V gate drive (2.5 Ohm at 2.5V). The device features a low gate charge of 0.55nC and low input capacitance of 36pF, enabling fast switching. It is ESD protected and operates over a junction temperature range of -55°C to 150°C.

 

The MOSFET is housed in a compact 3-UDFN surface mount package (U-DFN1212-3 Type C) with a weight of approximately 0.005 grams. It is fully RoHS3 compliant, halogen and antimony free, and meets UL 94V-0 flammability rating. Available in tape and reel packaging with options of 3,000 or 10,000 units per reel.

DMN62D1LFD-13 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN62D1LFD-13
Subcategory: N-Channel MOSFET

DMN62D1LFD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN62D1LFD-13 Estimated Pricing

Qty Low High
1+ $0.36 $0.36
10+ $0.22 $0.22
25+ $0.18 $0.18
50+ $0.16 $0.16
100+ $0.14 $0.14
10,000+ $0.06 $0.06
30,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN62D1LFD-13 Features

  • N-Channel enhancement mode MOSFET.
  • Low on-resistance: 2 Ohm at 4V gate drive.
  • Low input capacitance: 36 pF.
  • ESD protected.
  • RoHS3 compliant and halogen free.

DMN62D1LFD-13 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for battery operated systems.
  • Drives relays, solenoids, and lamps.

DMN62D1LFD-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V.

What is the package type?

3-UDFN (U-DFN1212-3 Type C).

What is the operating temperature range?

-55°C to 150°C (junction).

Is this component RoHS compliant?

Yes, RoHS3 compliant.

What is the continuous drain current?

400mA at 25°C ambient.

What is the gate threshold voltage?

1V maximum at 250µA drain current.

What is the on-resistance?

2 Ohm at Vgs=4V, 2.5 Ohm at Vgs=2.5V (both at 100mA).

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