Mfr Part #:

DMN62D1LFB-7B

DMN62D1LFB-7B is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a 60V drain-source breakdown voltage, 407mA continuous drain current, and a typical on-resistance of 2Ω at 4V gate drive.

✓ Total Stock: 31,020 pcs

$ Price Range: $0.07 - $0.43

DMN62D1LFB-7B Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	31,020 pcs On Request	31020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

DMN62D1LFB-7B Description

Short technical summary and product information.

The DMN62D1LFB-7B is an N-Channel enhancement mode MOSFET designed for low on-state resistance and fast switching. Key specifications include a drain-source breakdown voltage of 60V, a maximum continuous drain current of 407mA at 25°C, and a typical on-resistance of 2Ω at 4V gate drive (407mA) or 2.5Ω at 2.5V gate drive (364mA). The gate threshold voltage is 1V maximum at 250µA drain current. The device is housed in a compact X1-DFN1006-3 (3-UFDFN) surface-mount package, weighs only 0.001 grams, and is ESD protected. This MOSFET is suitable for DC-DC converters, power management functions, battery-operated systems, and solid-state relays.

DMN62D1LFB-7B Quick Information

Product Type: MOSFET

Canonical Name: DMN62D1LFB-7B N-Channel Enhancement Mode MOSFET

Subcategory: Single N-Channel

DMN62D1LFB-7B Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Lead-Free

DMN62D1LFB-7B Estimated Pricing

Qty	Low	High
1+	$0.43	$0.43
10+	$0.27	$0.27
25+	$0.22	$0.22
50+	$0.19	$0.19
100+	$0.17	$0.17
10,000+	$0.08	$0.08
30,000+	$0.07	$0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN62D1LFB-7B Features

N-Channel enhancement mode MOSFET
Drain-source voltage rating of 60V
407mA maximum continuous drain current
Low 2Ω typical on-resistance at 4V drive
Ultra-compact X1-DFN1006-3 surface-mount package

DMN62D1LFB-7B Applications

Used in DC-DC converter circuits
Ideal for power management functions
Suitable for battery-operated systems
Used in solid-state relays

DMN62D1LFB-7B FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the DMN62D1LFB-7B?

The drain-source breakdown voltage is 60V.

What package does the DMN62D1LFB-7B use?

It is in a 3-UFDFN package, also known as X1-DFN1006-3, and it is surface-mountable.

What is the operating temperature range?

The junction temperature range is -55°C to 150°C.

Is the DMN62D1LFB-7B RoHS compliant?

Yes, it is RoHS3 compliant and lead-free, as verified by the manufacturer datasheet.

What is the typical on-resistance of the DMN62D1LFB-7B?

The typical on-resistance is 2Ω at VGS = 4V, ID = 407mA, and 2.5Ω at VGS = 2.5V, ID = 364mA. The maximum on-resistance is 2Ω at VGS = 4V, ID = 100mA.

What is the maximum continuous drain current?

The maximum continuous drain current is 407mA at 25°C and 275mA at 70°C.

Does the DMN62D1LFB-7B have ESD protection?

Yes, the device is ESD protected according to the datasheet.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	320mA (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4V
ESD Protection	Yes
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.9 nC @ 4.5 V
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	64 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	500mW (Ta)
Rds On (Max) @ Id, Vgs	2Ohm
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	X1-DFN1006-3
Tape & Reel	Yes
Tape Width	8 mm
Technology	MOSFET (Metal Oxide)
Termination Finish	NiPdAu
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1V @ 250µA
Weight	0.001 grams