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DMN62D0UT-7 N-Channel enhancement mode MOSFET with 60V drain-source voltage, 320mA continuous drain current, and low on-resistance of 2 Ohm. Surface mount package SOT-523.
Mfr Part #:

DMN62D0UT-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET with 60V drain-source voltage, 320mA continuous drain current, and low on-resistance of 2 Ohm. Surface mount package SOT-523.
✓ Total Stock: 1,633,020 pcs
$ Price Range: $0.04 - $0.23

DMN62D0UT-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,633,020 pcs
On Request
1633020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN62D0UT-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN62D0UT-7 Description

Short technical summary and product information.

The DMN62D0UT-7 is an N-Channel enhancement mode MOSFET from Diodes Incorporated. It features a maximum drain-source voltage of 60V and continuous drain current of 320mA at 25°C. The device offers low on-resistance of 2 Ohm at VGS=4.5V and 2.5 Ohm at VGS=2.5V, enabling efficient power management. It has a low gate threshold voltage of 1V and low input capacitance of 32pF, making it suitable for high-speed switching applications. The MOSFET is ESD protected up to 1kV. It is housed in a compact SOT-523 surface mount package, weighing approximately 0.002 grams. The device is RoHS3 compliant, halogen and antimony free, and has a moisture sensitivity level of 1. Applications include motor control and power management functions.

DMN62D0UT-7 Quick Information

Product Type: N-Channel MOSFET
Canonical Name: DMN62D0UT-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN62D0UT-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN62D0UT-7 Estimated Pricing

Qty Low High
1+ $0.23 $0.23
10+ $0.14 $0.14
25+ $0.11 $0.11
50+ $0.10 $0.10
100+ $0.09 $0.09
3,000+ $0.05 $0.05
9,000+ $0.04 $0.04

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN62D0UT-7 Features

  • Low on-resistance of 2 Ohm at 4.5V gate drive.
  • ESD protected up to 1kV.
  • Compact SOT-523 surface mount package.
  • RoHS3 compliant and halogen free.
  • Low gate threshold voltage of 1V.

DMN62D0UT-7 Applications

  • Ideal for motor control in low-power applications.
  • Used in power management functions for portable devices.
  • Suitable for high-speed switching circuits.

DMN62D0UT-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60V.

What is the package type?

SOT-523.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN62D0UT-7 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the continuous drain current?

320mA at 25°C.

What is the on-resistance?

2 Ohm at VGS=4.5V, 2.5 Ohm at VGS=2.5V.

What is the gate threshold voltage?

1V at ID=250µA.

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