DMN62D0U-7 N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 380mA continuous drain current in a SOT23 package.
Mfr Part #:

DMN62D0U-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 380mA continuous drain current in a SOT23 package.
✓ Total Stock: 69,958 pcs
$ Price Range: $0.05 - $0.30

DMN62D0U-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
69,000 pcs
69000 pcs On Request 1 On Request On Request 20+ On Request On Request
Non-Authorised Inventory information
958 pcs
958 pcs On Request 1 On Request On Request 2306 On Request On Request

DMN62D0U-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

DMN62D0U-7 Description

Short technical summary and product information.

The DMN62D0U-7 is an N-channel enhancement mode MOSFET designed for high-efficiency power management applications. It features a drain-source voltage rating of 60V and a continuous drain current of 380mA at 25°C (340mA at 70°C). The device offers low on-resistance: 2Ω maximum at VGS=4.5V and 2.5Ω maximum at VGS=2.5V, enabling efficient switching with low conduction losses.

 

With an input capacitance of just 32pF, this MOSFET delivers fast switching performance suitable for motor control, backlighting, and power management functions. The gate threshold voltage is 1V at 250µA, allowing logic-level drive compatibility. The device is ESD protected up to 1kV, enhancing robustness in handling and operation.

 

Packaged in a SOT23 surface mount package, the DMN62D0U-7 is fully RoHS compliant, halogen-free, and antimony-free, meeting green manufacturing standards. The package uses molded plastic with UL 94V-0 flammability rating and is moisture sensitivity level 1 per J-STD-020. Terminals are matte tin annealed over Alloy 42 leadframe, solderable per MIL-STD-202 Method 208.

DMN62D0U-7 Quick Information

Product Type: MOSFET
Series: DMN62D0U
Canonical Name: DMN62D0U-7 N-Channel Enhancement Mode MOSFET
Subcategory: Single MOSFET

DMN62D0U-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1
REACH Status: Compliant
Lead Free: Yes

DMN62D0U-7 Estimated Pricing

Qty Low High
1+ $0.30 $0.30
10+ $0.18 $0.18
25+ $0.15 $0.15
50+ $0.13 $0.13
100+ $0.11 $0.11
3,000+ $0.06 $0.06
9,000+ $0.05 $0.05

Estimated market price range - modelled values for guidance only, not live distributor offers.

DMN62D0U-7 Features

  • Low on-resistance: 2Ω at 4.5V gate drive.
  • Low input capacitance: 32pF for fast switching.
  • ESD protected up to 1kV.
  • RoHS compliant and halogen-free.
  • SOT23 surface mount package.

DMN62D0U-7 Applications

  • Used in motor control circuits.
  • Ideal for power management applications.
  • Suitable for backlighting systems.
  • Designed for high-efficiency switching.

DMN62D0U-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V maximum.

What is the continuous drain current?

380mA at 25°C ambient, 340mA at 70°C ambient.

What is the on-resistance?

2Ω maximum at VGS=4.5V and ID=100mA; 2.5Ω maximum at VGS=2.5V.

What is the package type?

SOT23 surface mount package.

Is this device RoHS compliant?

Yes, fully RoHS compliant, halogen-free, and antimony-free.

Is it ESD protected?

Yes, ESD protected up to 1kV.

What is the gate threshold voltage?

1V maximum at ID=250µA.

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