DMN62D0LFB-7 The DMN62D0LFB-7 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated. It offers 320mA continuous drain current and low on-resistance of 2Ω at 4V gate drive.
Mfr Part #:

DMN62D0LFB-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN62D0LFB-7 is a 60V N-channel enhancement mode MOSFET from Diodes Incorporated. It offers 320mA continuous drain current and low on-resistance of 2Ω at 4V gate drive.
✓ Total Stock: 37,020 pcs

DMN62D0LFB-7 Available from 1 distributor

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DMN62D0LFB-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN62D0LFB-7 Description

Short technical summary and product information.

The DMN62D0LFB-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining fast switching performance, making it suitable for high-efficiency power management applications. The device features a maximum drain-source voltage of 60V and a continuous drain current of 320mA at 25°C.

 

Key electrical specifications include a maximum on-resistance of 2Ω at VGS=4V and ID=100mA, and 2.5Ω at VGS=2.5V and ID=50mA. Input capacitance is 32pF and gate charge is 0.45nC, enabling fast switching with low gate drive. The device is ESD protected and has a gate-source threshold voltage of 1V maximum.

 

The DMN62D0LFB-7 comes in an X1-DFN1006-3 surface mount package with a weight of 0.001g. It is rated for operation from -55°C to +150°C junction temperature and can dissipate up to 0.5W. The device is RoHS3 compliant, lead-free, and halogen-free, making it suitable for environmentally sensitive designs. Typical applications include DC-DC converters, power management functions, battery-operated systems, solid-state relays, and driver circuits.

DMN62D0LFB-7 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 60V, X1-DFN1006-3
Subcategory: N-Channel MOSFET

DMN62D0LFB-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN62D0LFB-7 Features

  • N-channel MOSFET for low-voltage switching.
  • 60V drain-source breakdown voltage rating.
  • 320mA continuous drain current at 25°C.
  • Low on-resistance of 2Ω at 4V drive.
  • ESD protected and RoHS3 compliant.

DMN62D0LFB-7 Applications

  • DC-DC converter power management circuits.
  • Battery operated portable electronic devices.
  • Relay, solenoid, lamp and display drivers.
  • Solid-state relay and load switching.

DMN62D0LFB-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage rating of the DMN62D0LFB-7?

The maximum drain-source breakdown voltage is 60V.

What is the package type of the DMN62D0LFB-7?

The device is housed in an X1-DFN1006-3 surface mount package.

What is the operating temperature range of the DMN62D0LFB-7?

It operates over a junction temperature range of -55°C to +150°C.

Is the DMN62D0LFB-7 RoHS compliant?

Yes, the device is RoHS3 compliant and lead-free per the datasheet.

What is the continuous drain current rating at 25°C?

The maximum continuous drain current is 320mA at VGS=4V and TA=25°C.

What is the on-resistance of the DMN62D0LFB-7?

Maximum on-resistance is 2Ω at VGS=4V and ID=100mA, and 2.5Ω at VGS=2.5V and ID=50mA.

Does the DMN62D0LFB-7 have ESD protection?

Yes, the device includes ESD protection per the datasheet.

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