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DMN61D9UW-7 N-channel enhancement mode MOSFET designed for low on-state resistance and high-efficiency power management. Rated 60V drain-source voltage and 340mA continuous drain current.
Mfr Part #:

DMN61D9UW-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-channel enhancement mode MOSFET designed for low on-state resistance and high-efficiency power management. Rated 60V drain-source voltage and 340mA continuous drain current.
✓ Total Stock: 4,585 pcs

DMN61D9UW-7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Fe Components ✓
Non-Authorised Inventory information
3,000 pcs
On Request
3000 pcs On Request 1 On Request On Request On Request On Request On Request
Bristol Electronics ✓
Non-Authorised Inventory information
1,585 pcs
On Request
1585 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN61D9UW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
ESD Protection
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN61D9UW-7 Description

Short technical summary and product information.

The DMN61D9UW-7 is an N-channel enhancement mode MOSFET from Diodes Incorporated. It features a drain-source voltage (Vdss) of 60V and a maximum continuous drain current of 340mA at +25°C. The device achieves a low on-resistance of 2 Ohms at Vgs=5V, minimizing conduction losses. The gate threshold voltage is 1V maximum at Id=250µA, allowing logic-level gate drive. Input capacitance is 28.5pF maximum at Vds=30V, enabling fast switching. Gate charge is 0.4nC at Vgs=4.5V. The device is ESD protected up to 2kV. It is housed in a surface-mount SOT-323 package (SC-70), supplied in tape and reel packaging with 3000 units per reel. Termination finish is matte tin annealed over Alloy 42 leadframe. The part is fully RoHS compliant, lead-free, and halogen and antimony free.

DMN61D9UW-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN61D9UW-7 N-Channel Enhancement Mode MOSFET
Subcategory: Discrete Semiconductors

DMN61D9UW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 per J-STD-020
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN61D9UW-7 Features

  • 60V drain-source voltage rating.
  • Low on-resistance 2 Ohm at 5V gate drive.
  • ESD protected up to 2kV.
  • Surface mount SOT-323 package.
  • RoHS and halogen free compliant.

DMN61D9UW-7 Applications

  • Suitable for power management functions.
  • Can be used in motor control circuits.
  • Ideal for backlighting applications.

DMN61D9UW-7 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of DMN61D9UW-7?

60V

What is the maximum continuous drain current at +25°C?

340mA

What is the package type of DMN61D9UW-7?

SOT-323

What is the operating temperature range?

-55°C to +150°C (junction)

Is DMN61D9UW-7 RoHS compliant?

Yes, RoHS3 compliant and lead-free

What is the maximum on-resistance at Vgs=5V?

2 Ohms at Id=50mA

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