DistyParts Icon
DMN61D9UDW-7 DMN61D9UDW-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated, rated for 60V drain-source voltage and 350mA continuous drain current.
Mfr Part #:

DMN61D9UDW-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN61D9UDW-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated, rated for 60V drain-source voltage and 350mA continuous drain current.
✓ Total Stock: 1,900 pcs

DMN61D9UDW-7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,900 pcs
On Request
1900 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN61D9UDW-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight
View Similar Products (0)

DMN61D9UDW-7 Description

Short technical summary and product information.

The DMN61D9UDW-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It features a drain-source voltage rating of 60V and a continuous drain current of 350mA. The on-state resistance is a maximum of 2 ohms at 5V gate drive and 2.5 ohms at 2.5V, enabling efficient switching and low conduction losses.

 

This MOSFET is housed in an ultra-small SOT-363 surface mount package, making it suitable for space-constrained designs. It offers low gate threshold voltage (1V max), low input capacitance (28.5pF), and low gate charge (0.4nC), facilitating fast switching and reduced drive requirements. The device is ESD protected up to 2kV and supports an operating junction temperature range of -55°C to +150°C.

 

The device is fully RoHS compliant, halogen and antimony free, and MSL Level 1 per J-STD-020. It is qualified to JEDEC standards for high reliability, with an automotive-compliant variant (DMN61D9UDWQ) available separately. Typical applications include motor controls and power management functions.

DMN61D9UDW-7 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN61D9UDW-7 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel MOSFET

DMN61D9UDW-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free (RoHS)

DMN61D9UDW-7 Features

  • Dual N-Channel enhancement mode MOSFET.
  • Rated for 60V drain-source voltage.
  • Continuous drain current up to 350mA.
  • Low on-resistance: 2 ohm at 5V gate drive.
  • ESD protected up to 2kV.

DMN61D9UDW-7 Applications

  • Ideal for motor control applications.
  • Suitable for power management functions.
  • Used in portable and battery-powered devices.
  • Supports fast switching power circuits.

DMN61D9UDW-7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the DMN61D9UDW-7?

The drain-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 350mA.

What is the on-resistance?

The maximum on-resistance is 2 ohms at VGS=5V, ID=50mA, and 2.5 ohms at VGS=2.5V, ID=50mA.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What package is the DMN61D9UDW-7 available in?

It is available in a 6-TSSOP, SC-88, SOT-363 surface mount package. The supplier device package is SOT-363.

Home
Account

Categories