DMN61D8LVTQ-7 The DMN61D8LVTQ-7 is a dual N-channel MOSFET from Diodes Incorporated, rated for 60V drain-source voltage and 630mA continuous drain current. It is housed in a TSOT-26 surface-mount package.
Mfr Part #:

DMN61D8LVTQ-7

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
The DMN61D8LVTQ-7 is a dual N-channel MOSFET from Diodes Incorporated, rated for 60V drain-source voltage and 630mA continuous drain current. It is housed in a TSOT-26 surface-mount package.
✓ Total Stock: 532,020 pcs

DMN61D8LVTQ-7 Available from 1 distributor

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DMN61D8LVTQ-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMN61D8LVTQ-7 Description

Short technical summary and product information.

The DMN61D8LVTQ-7 is a dual N-channel MOSFET designed for switching inductive loads such as relays, solenoids, and small DC motors in automotive applications. It integrates two N-channel MOSFETs with a logic-level gate, allowing direct drive from microcontrollers and logic gates. Key electrical specifications include a maximum drain-source voltage of 60V, continuous drain current of 630mA at +25°C, and low on-resistance of 1.8 Ohm at Vgs=5V and 2.4 Ohm at Vgs=3V. The device features a maximum gate threshold voltage of 2V, gate charge of 0.74nC, and input capacitance of 12.9pF. It is AEC-Q101 qualified for automotive use and is RoHS3 compliant, lead-free, and halogen-free. The DMN61D8LVTQ-7 is supplied in a TSOT-26 surface-mount package with matte tin terminals and is available in tape and reel packaging with 3,000 pieces per reel.

DMN61D8LVTQ-7 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN61D8LVTQ-7 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

DMN61D8LVTQ-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN61D8LVTQ-7 Features

  • 60V drain-source voltage rating.
  • 630mA continuous drain current.
  • 1.8 Ohm on-resistance at 5V gate drive.
  • Logic-level gate for microcontroller drive.
  • AEC-Q101 qualified for automotive use.

DMN61D8LVTQ-7 Applications

  • Switching relay coils in automotive systems.
  • Driving solenoids and small DC motors.
  • Replaces discrete relay driver circuits.
  • Used in door, window, and antenna modules.

DMN61D8LVTQ-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the DMN61D8LVTQ-7?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating?

The continuous drain current (Id) is 630 mA at TA=+25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 1.8 Ohm at Id=150mA and Vgs=5V, and 2.4 Ohm at Id=150mA and Vgs=3V.

What is the operating temperature range?

The operating temperature range is -55°C to +150°C (junction temperature).

Is the DMN61D8LVTQ-7 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free.

What package does the DMN61D8LVTQ-7 come in?

It comes in a TSOT-26 surface-mount package (SOT-23-6 Thin, TSOT-23-6).

Is this MOSFET suitable for automotive applications?

Yes, it is AEC-Q101 qualified and PPAP capable.

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