DMN61D8LVT-7 Dual N-Channel MOSFET from Diodes Incorporated, 60V drain-source voltage, 630mA continuous drain current, in TSOT-26 package. Features logic level gate and low on-resistance of 1.8Ohm.
Mfr Part #:

DMN61D8LVT-7

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel MOSFET from Diodes Incorporated, 60V drain-source voltage, 630mA continuous drain current, in TSOT-26 package. Features logic level gate and low on-resistance of 1.8Ohm.
✓ Total Stock: 41,724 pcs

DMN61D8LVT-7 Available from 2 distributors

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✓ Non-Authorised
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37,020 pcs
37020 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,704 pcs
4704 pcs On Request 1 On Request On Request 18+ On Request On Request

DMN61D8LVT-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
Weight

DMN61D8LVT-7 Description

Short technical summary and product information.

The DMN61D8LVT-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for efficient switching of inductive loads such as relays, solenoids, and small DC motors in automotive and industrial applications. It integrates a logic level gate that allows direct drive from logic gates, inverters, and microcontrollers, eliminating the need for external level shifting components.

 

Key electrical specifications include a drain-to-source voltage rating of 60V, continuous drain current of 630mA, and a maximum on-resistance of 1.8Ω at Vgs = 5V. The device features an internal active clamp that removes the requirement for an external freewheeling diode, reducing component count and PCB footprint. Gate charge is only 0.74nC, enabling fast switching with minimal drive power.

 

The MOSFET is housed in a compact TSOT-26 package (equivalent to SOT-23-6 Thin) suitable for surface mount assembly. It is rated for operation over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 820mW. The device is fully RoHS3 compliant, lead-free, and halogen and antimony free, meeting green manufacturing standards.

DMN61D8LVT-7 Quick Information

Product Type: Dual N-Channel MOSFET Array
Canonical Name: DMN61D8LVT-7 Dual N-Channel MOSFET 60V 630mA TSOT-26
Subcategory: Dual N-Channel MOSFET

DMN61D8LVT-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Totally Lead-Free

DMN61D8LVT-7 Features

  • Dual N-Channel MOSFET in TSOT-26 package.
  • 60V drain-to-source voltage rating.
  • 630mA continuous drain current.
  • Logic level gate for direct microcontroller drive.
  • Low Rds(on) of 1.8Ohm at 5V gate drive.

DMN61D8LVT-7 Applications

  • Switching inductive loads like relays and solenoids.
  • Automotive antenna relay coil driver.
  • Replace discrete components in relay drivers.
  • Interface between logic and DC relay coils.
  • Small DC motor control in automotive.

DMN61D8LVT-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the DMN61D8LVT-7?

-55°C to 150°C junction temperature.

Is the DMN61D8LVT-7 RoHS compliant?

Yes, it is RoHS3 compliant and totally lead-free, also halogen and antimony free.

What package does the DMN61D8LVT-7 use?

It is available in a TSOT-26 package (SOT-23-6 Thin).

What is the gate threshold voltage of this MOSFET?

Maximum 2V at 1mA drain current.

What is the maximum power dissipation?

820mW.

What is the input capacitance?

12.9pF at 12V Vds.

What is the gate charge of the DMN61D8LVT-7?

0.74nC at 5V gate voltage.

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