| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
4,704 pcs
|
4704 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN61D8LVT-7 is a dual N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for efficient switching of inductive loads such as relays, solenoids, and small DC motors in automotive and industrial applications. It integrates a logic level gate that allows direct drive from logic gates, inverters, and microcontrollers, eliminating the need for external level shifting components.
Key electrical specifications include a drain-to-source voltage rating of 60V, continuous drain current of 630mA, and a maximum on-resistance of 1.8Ω at Vgs = 5V. The device features an internal active clamp that removes the requirement for an external freewheeling diode, reducing component count and PCB footprint. Gate charge is only 0.74nC, enabling fast switching with minimal drive power.
The MOSFET is housed in a compact TSOT-26 package (equivalent to SOT-23-6 Thin) suitable for surface mount assembly. It is rated for operation over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 820mW. The device is fully RoHS3 compliant, lead-free, and halogen and antimony free, meeting green manufacturing standards.
-55°C to 150°C junction temperature.
Yes, it is RoHS3 compliant and totally lead-free, also halogen and antimony free.
It is available in a TSOT-26 package (SOT-23-6 Thin).
Maximum 2V at 1mA drain current.
820mW.
12.9pF at 12V Vds.
0.74nC at 5V gate voltage.