| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,769 pcs
|
1769 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC-Q101 | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Rds On Max (Maximum @ Vgs=3 V) | |
| SVHC Present | |
| Standard Package Qty | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN61D8LVT-13 is a dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for switching inductive loads such as relays, solenoids, and small DC motors. It integrates two MOSFETs in a single TSOT-26 package, providing a compact solution for space-constrained applications. The device features a drain-to-source voltage rating of 60V and a maximum drain current of 630mA. The on-resistance is 1.8 Ohm at Vgs=5V and 2.4 Ohm at Vgs=3V, enabling logic-level gate drive. The MOSFET includes an internal active clamp, eliminating the need for an external freewheeling diode. It is qualified to AEC-Q101 standards for automotive reliability. The device is RoHS compliant and halogen-free. It is surface mounted in a TSOT-26 package with a standard package quantity of 10,000 pieces on tape and reel.
-55°C to 150°C (junction).
TSOT-26 (SOT-23-6 Thin, TSOT-23-6).
Yes, RoHS3 compliant and lead-free.
60V.
1.8 Ohm maximum.
Yes, it is qualified to AEC-Q101 standards.
0.74 nC at Vgs=5V.