| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
421,020 pcs
|
421020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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The DMN6140L-13 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. This MOSFET features a maximum drain-source voltage of 60V and a continuous drain current of 1.6A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 140 mΩ at VGS=10V and 170 mΩ at VGS=4.5V, with a low input capacitance of 315 pF. The device is qualified to AEC-Q101 standards for high reliability and is suitable for automotive and industrial applications.
The DMN6140L-13 is housed in a surface-mount SOT-23-3 package and is supplied in tape and reel packaging with 10,000 units per reel. It is fully RoHS compliant, halogen and antimony free, and has a moisture sensitivity level of 1.
The maximum drain-source voltage is 60V.
The continuous drain current is 1.6A at Ta=+25°C.
The maximum on-resistance is 140 mΩ at VGS=10V and ID=1.8A.
The DMN6140L-13 is available in a surface mount SOT-23-3 package.
The operating junction temperature range is -55°C to 150°C.
Yes, the DMN6140L-13 is fully RoHS3 compliant.
The maximum gate threshold voltage is 3V at ID=250µA.