Mfr Part #:

DMN60H080DS-7

N-Channel enhancement mode MOSFET with 600V drain-source voltage rating and 80mA continuous drain current in a SOT23-3 surface mount package.

✓ Total Stock: 12,602 pcs

DMN60H080DS-7 Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	8,582 pcs On Request	8582 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	4,020 pcs On Request	4020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

DMN60H080DS-7 Description

Short technical summary and product information.

The DMN60H080DS-7 is an N-Channel enhancement mode field effect transistor from Diodes Incorporated. It features a drain-to-source voltage (Vdss) of 600V and a continuous drain current of 70mA at 25°C (80mA Ta). The device has a maximum drain-source on-resistance of 100 Ohms at VGS = 10V and ID = 60mA.

This MOSFET uses advanced planar technology for high voltage operation and fast switching, making it suitable for small-signal and level shift applications. It offers low input capacitance of 25pF and a maximum gate charge of 1.7nC. The gate threshold voltage is 3V at ID = 250µA.

The device is housed in a SOT23-3 surface mount package (TO-236-3, SC-59) and supports an operating junction temperature range of -55°C to +150°C. It is rated for a maximum power dissipation of 1.1W at 25°C ambient.

DMN60H080DS-7 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: DMN60H080DS-7 N-Channel Enhancement Mode Field Effect MOSFET

Subcategory: Single MOSFET

DMN60H080DS-7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 per J-STD-020

REACH Status: REACH Unaffected

Lead Free: Lead-Free

DMN60H080DS-7 Features

N-Channel enhancement mode MOSFET design.
Rated for 600V drain-to-source voltage.
Low input capacitance of 25pF.
Surface mount SOT23-3 package.
RoHS3 compliant and lead-free.

DMN60H080DS-7 Applications

Ideal for motor control circuits.
Used in DC-DC converter designs.
Suitable for backlighting applications.
Designed for power management functions.

DMN60H080DS-7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage for the DMN60H080DS-7?

The maximum drain-to-source voltage (Vdss) is 600V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 70mA at TA=+25°C (steady state) and 56mA at TA=+70°C. The existing database also lists 80mA at TA=+25°C.

What is the package type for the DMN60H080DS-7?

The device is available in a SOT23-3 surface mount package (also known as TO-236-3 or SC-59).

What is the operating temperature range for this part?

The operating junction temperature range is -55°C to +150°C.

Is the DMN60H080DS-7 RoHS compliant?

Yes, the datasheet states it is Totally Lead-Free and Fully RoHS Compliant (EU Directive 2011/65/EU & 2015/863/EU).

What is the maximum drain-source on-resistance?

The maximum on-resistance is 100 Ohms at VGS = 10V and ID = 60mA.

What is the gate threshold voltage for this MOSFET?

The maximum gate threshold voltage is 3V at ID = 250µA.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	80 mA (Ta)
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	1.7 nC @ 10 V
Halogen Free	Halogen and Antimony Free
Input Capacitance (Ciss) (Max) @ Vds	25 pF @ 25 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1.1W (Ta)
Rds On (Max) @ Id, Vgs	100 Ohm
Supplier Device Package	SOT-23-3
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA
Weight	0.008 grams (Approximate)