DMN6075SQ-13 This DMN6075SQ-13 is a 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, offering low on-resistance of 85 mΩ at 10V gate drive, in a surface-mount SOT-23 package.
Mfr Part #:

DMN6075SQ-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
This DMN6075SQ-13 is a 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, offering low on-resistance of 85 mΩ at 10V gate drive, in a surface-mount SOT-23 package.
✓ Total Stock: 101,020 pcs

DMN6075SQ-13 Available from 1 distributor

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DMN6075SQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN6075SQ-13 Description

Short technical summary and product information.

The DMN6075SQ-13 is a 60V N-Channel Enhancement Mode MOSFET from Diodes Incorporated, designed for automotive and general-purpose power management applications. This MOSFET features a maximum drain-source voltage of 60V and a continuous drain current rating of 2.5A at 25°C (steady state, 10V gate drive). The device offers low on-resistance of 85 mΩ maximum at 10V gate drive and 120 mΩ at 4.5V, enabling efficient switching and conduction.

 

The MOSFET is qualified to AEC-Q101 and is PPAP capable, making it suitable for automotive applications requiring stringent change control. It is manufactured in IATF16949:2016 certified facilities. The device is fully RoHS compliant, halogen and antimony free, and meets moisture sensitivity level 1 per J-STD-020.

 

The DMN6075SQ-13 is housed in a compact SOT-23 surface-mount package, with a maximum power dissipation of 800 mW at 25°C ambient. It features a total gate charge of 12.3 nC at 10V and an input capacitance of 606 pF at 20V drain-source voltage, contributing to fast switching speeds. The operating junction temperature range is -55°C to 150°C.

 

Typical applications include DC-DC converters, power management functions, and backlighting in automotive electronic systems. The device is available in tape and reel packaging with 10,000 units per reel for automated assembly.

DMN6075SQ-13 Quick Information

Product Type: MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor)
Canonical Name: DMN6075SQ-13 60V N-Channel Enhancement Mode MOSFET
Subcategory: N-Channel Single MOSFET

DMN6075SQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 - Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead Free

DMN6075SQ-13 Features

  • 60V drain-source voltage rating.
  • 2.5A continuous drain current.
  • Low 85 mΩ on-resistance at 10V.
  • AEC-Q101 qualified for automotive.
  • SOT-23 surface-mount package.

DMN6075SQ-13 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for automotive backlighting.

DMN6075SQ-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of this MOSFET?

The maximum drain-source voltage (Vdss) is 60 V.

What package is the DMN6075SQ-13 available in?

It is available in a SOT-23 surface-mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the DMN6075SQ-13 RoHS compliant?

Yes, it is fully RoHS3 compliant (EU Directive 2015/863/EU).

What is the maximum continuous drain current at 25°C?

The maximum continuous drain current is 2.5 A at 25°C with VGS = 10V (steady state, per Note 6).

What is the typical on-resistance at 10V gate drive?

The maximum drain-source on-resistance is 85 mΩ at VGS = 10V and ID = 3.2A.

Is this MOSFET qualified for automotive applications?

Yes, it is AEC-Q101 qualified and PPAP capable.

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