| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
374 pcs
|
374 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Finish | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN6070SY-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated designed for high-efficiency power management applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 4.1A at 25°C. The device offers low on-resistance: 85mΩ maximum at VGS=10V and 110mΩ at VGS=4.5V, enabling efficient switching.
Key electrical characteristics include a low gate threshold voltage (3V max at 250µA), low input capacitance (588pF at VDS=30V), and a gate charge of 12.3nC at VGS=10V. The MOSFET is rated for pulsed drain current up to 15A and avalanche energy of 6mJ. It operates over a junction temperature range of -55°C to 150°C with a maximum power dissipation of 2.1W.
The device is housed in a SOT89 surface mount package with gull wing leads and matte tin finish. It is supplied in tape and reel packaging with 2500 units per reel. The DMN6070SY-13 is fully RoHS3 compliant, lead-free, and halogen and antimony free. Moisture sensitivity level is 1 (unlimited). Typical applications include DC-DC converters, power management functions, and backlighting.
The maximum drain-source voltage (Vdss) is 60V.
It comes in a SOT89 surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and lead-free.
The maximum on-resistance is 85mΩ at VGS=10V and ID=2.5A.
The maximum gate charge (Qg) is 12.3nC at VGS=10V.
The maximum input capacitance (Ciss) is 588pF at VDS=30V.