DMN6069SFG-7 DMN6069SFG-7 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance of 50mΩ at 10V gate drive and is packaged in a PowerDI3333-8 surface mount package.
Mfr Part #:

DMN6069SFG-7

Available from 3 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN6069SFG-7 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated. It features low on-resistance of 50mΩ at 10V gate drive and is packaged in a PowerDI3333-8 surface mount package.
✓ Total Stock: 64,832 pcs

DMN6069SFG-7 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
60,000 pcs
60000 pcs On Request 1 On Request On Request 1928+ On Request On Request
Non-Authorised Inventory information
4,769 pcs
4769 pcs On Request 1 On Request On Request 1824+ On Request On Request
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63 pcs
63 pcs On Request 1 On Request On Request On Request On Request On Request

DMN6069SFG-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
Weight

DMN6069SFG-7 Description

Short technical summary and product information.

The DMN6069SFG-7 is a 60V N-Channel enhancement mode MOSFET designed for high efficiency power management applications. It offers a maximum drain current of 18A at case temperature and a low on-resistance of 50mΩ at 10V gate drive, minimizing conduction losses. The device also features a gate threshold voltage of 3V maximum and a total gate charge of 25nC, enabling efficient switching.

 

This MOSFET is suitable for backlighting, DC-DC converters, and general power management functions. It is built with a small form factor PowerDI3333-8 package that occupies only 33% of the board area of an SO-8, allowing higher density designs. The package is surface mount and rated for a junction temperature range of -55°C to 150°C.

 

The DMN6069SFG-7 is fully RoHS3 compliant, lead-free, and halogen and antimony free (green device). It is also qualified to AEC-Q101 standards for high reliability, making it suitable for automotive applications. The device is available in tape and reel packaging with 2000 pieces per reel.

DMN6069SFG-7 Quick Information

Product Type: MOSFET
Canonical Name: DMN6069SFG-7 N-Channel MOSFET 60V 18A PowerDI3333-8
Subcategory: N-Channel MOSFET

DMN6069SFG-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

DMN6069SFG-7 Features

  • Low on-resistance of 50mΩ at 10V.
  • High continuous drain current of 18A.
  • Surface mount PowerDI3333-8 package.
  • RoHS3 compliant and halogen free.
  • Qualified to AEC-Q101 standards.

DMN6069SFG-7 Applications

  • Ideal for backlighting applications.
  • Used in DC-DC converter circuits.
  • Suitable for power management functions.
  • Designed for high efficiency power systems.

DMN6069SFG-7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the DMN6069SFG-7?

60 V.

What package is the DMN6069SFG-7 available in?

PowerDI3333-8 surface mount package.

What is the operating junction temperature range?

-55°C to 150°C.

Is the DMN6069SFG-7 RoHS compliant?

Yes, it is fully RoHS3 compliant and lead-free.

What is the typical on-resistance at 10V gate drive?

50 mΩ maximum at 4.5A drain current.

What is the maximum gate threshold voltage?

3V at 250µA drain current.

What is the maximum continuous drain current at case temperature?

18A at TC=25°C.

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