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DMN6069SE-13 DMN6069SE-13 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated. It offers 4.3A continuous drain current (at 25°C ambient) and low on-resistance of 69mOhm at 10V gate drive.
Mfr Part #:

DMN6069SE-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN6069SE-13 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated. It offers 4.3A continuous drain current (at 25°C ambient) and low on-resistance of 69mOhm at 10V gate drive.
✓ Total Stock: 290 pcs

DMN6069SE-13 Available from 1 distributor

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290 pcs
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DMN6069SE-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id
Weight
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DMN6069SE-13 Description

Short technical summary and product information.

The DMN6069SE-13 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed to minimize on-state resistance while maintaining superior switching performance. Key electrical specifications include a drain-source breakdown voltage of 60V, continuous drain current of 4.3A at 25°C ambient (10A at case temperature), and a maximum on-resistance of 69mOhm at VGS=10V and 100mOhm at VGS=4.5V. The gate threshold voltage is 3V maximum, and the gate charge is 16nC at 10V, enabling fast switching. Input capacitance is 825pF at 30V.

 

This MOSFET is suitable for power-management applications such as motor controls, DC-DC converters, transformer driving switches, and uninterrupted power supplies. It features low on-resistance, fast switching speed, and is 100% UIS tested in production. The device is packaged in a surface-mount SOT223 package (TO-261-4/TO-261AA) and is supplied in tape & reel with 2500 units per reel. Package weight is approximately 0.112 grams.

 

The DMN6069SE-13 is RoHS3 compliant with a lead-free finish, MSL Level 1 (unlimited), and is halogen and antimony free (green device). It is qualified to JEDEC standards for high reliability.

DMN6069SE-13 Quick Information

Product Type: MOSFET - Single N-Channel
Canonical Name: DMN6069SE-13
Subcategory: N-Channel Enhancement Mode MOSFET

DMN6069SE-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free Finish

DMN6069SE-13 Features

  • Low on-resistance of 69mOhm at 10V gate drive.
  • High drain current capability up to 10A at case temperature.
  • Fast switching with 16nC typical gate charge.
  • Surface mount SOT223 package for compact designs.
  • RoHS3 compliant and halogen free.

DMN6069SE-13 Applications

  • Ideal for DC-DC converter power stages.
  • Used in motor control circuits.
  • Suitable for power management in portable devices.
  • Employed in uninterrupted power supply designs.

DMN6069SE-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of DMN6069SE-13?

SOT223 surface mount package.

What is the operating temperature range?

-55°C to 150°C junction temperature.

Is the DMN6069SE-13 RoHS compliant?

Yes, it is RoHS3 compliant with lead-free finish.

What is the drain-source breakdown voltage?

60V.

What is the maximum drain current?

4.3A at 25°C ambient and 10A at 25°C case temperature.

What is the on-resistance?

69mOhm at VGS=10V, 100mOhm at VGS=4.5V.

What is the gate threshold voltage?

Maximum 3V at ID=250µA.

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