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349,020 pcs
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349020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN6068SEQ-13 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for automotive and power management applications. It features a maximum drain-source voltage of 60V and a continuous drain current of 5.6A at 25°C ambient temperature. The device offers low on-resistance of 68mΩ at 10V gate drive and 100mΩ at 4.5V, enabling efficient power switching.
This MOSFET is qualified to AEC-Q101 and is PPAP capable, making it suitable for automotive applications requiring stringent quality control. It is manufactured in IATF 16949 certified facilities. The device is 100% tested for Unclamped Inductive Switch (UIS) performance, with a single pulsed avalanche energy rating of 37.5mJ.
The DMN6068SEQ-13 comes in a surface mount SOT223 package with a molded plastic green molding compound. It is RoHS compliant, halogen and antimony free, and features a matte tin annealed finish over a copper lead frame. The package is moisture sensitivity level 1 per J-STD-020, allowing unlimited floor life.
Typical applications include motor controls, transformer driving switches, DC-DC converters, power management functions, and uninterrupted power supplies. The device operates over a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 2W at 25°C ambient.
The maximum drain-source voltage (Vdss) is 60V.
The continuous drain current is 5.6A at 25°C ambient and 4.5A at 70°C ambient.
The on-resistance is 68mΩ maximum at 10V gate drive with 12A drain current, and 100mΩ maximum at 4.5V gate drive.
The device is available in a surface mount SOT223 package (TO-261-4, TO-261AA).
The operating junction temperature range is -55°C to 150°C.
Yes, the device is RoHS3 compliant per EU Directive 2002/95/EC, 2011/65/EU, and 2015/863/EU.
The maximum gate threshold voltage is 3V at a drain current of 250µA.