| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
513,020 pcs
|
513020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,577 pcs
|
1577 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
841 pcs
|
841 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN6068SE-13 is an N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for general-purpose switching applications. It features a drain-source voltage rating of 60V and a continuous drain current of up to 5.6A at 25°C case temperature.
This MOSFET offers low on-resistance: 68mOhm maximum at VGS=10V and 100mOhm maximum at VGS=4.5V. The gate threshold voltage is 3V maximum at 250µA drain current. Total gate charge is 10.3nC at 10V, ensuring fast switching performance.
Housed in a surface-mount SOT223 package with TO-261-4 footprint, the device is suitable for compact designs. Applications include motor controls, DC-DC converters, transformer driving switches, and power management functions. The operating junction temperature range is -55°C to 150°C.
The DMN6068SE-13 is RoHS3 compliant and halogen-free, meeting environmental standards. It is supplied in tape and reel packaging with 4000 units per reel.
60V
SOT223 (TO-261-4)
-55°C to 150°C (junction)
Yes, it is RoHS3 compliant and also halogen-free.
Maximum 3V at 250µA drain current