DMN6068LK3-13 N-Channel enhancement mode MOSFET, 60V drain-source voltage, 6A continuous drain current. Features low on-resistance (68mΩ at 10V) and fast switching.
Mfr Part #:

DMN6068LK3-13

Available from 4 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
N-Channel enhancement mode MOSFET, 60V drain-source voltage, 6A continuous drain current. Features low on-resistance (68mΩ at 10V) and fast switching.
✓ Total Stock: 33,794 pcs

DMN6068LK3-13 Available from 4 distributors

✓ Authorised
✓ Non-Authorised

DMN6068LK3-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape Width
Technology
Termination Finish
Vgs (Max)
Vgs(th) (Max) @ Id

DMN6068LK3-13 Description

Short technical summary and product information.

The DMN6068LK3-13 is a 60V N-Channel enhancement mode MOSFET from Diodes Incorporated, designed for high efficiency power management applications. It delivers a continuous drain current of 6A at TA=25°C and features a maximum on-resistance of only 68mΩ at VGS=10V, and 100mΩ at VGS=4.5V. The device offers fast switching performance with a gate charge of 10.3nC at 10V and input capacitance of 502pF at 30V.

 

The MOSFET is qualified to AEC-Q101 standards for high reliability and includes 100% unclamped inductive switch (UIS) testing. It is suitable for motor control, transformer driving switches, DC-DC converters, power management functions, and uninterruptible power supplies. The robust design supports a junction temperature range of -55°C to +150°C and provides a maximum power dissipation of 2.12W at TA=25°C (minimum footprint).

 

Packaged in the industry-standard TO-252-3 (DPak) surface mount package with matte tin finish, the DMN6068LK3-13 is lead-free and RoHS3 compliant. It is also halogen and antimony free (green device). The part is supplied on 13-inch reels with 16mm tape width, 2500 pieces per reel.

DMN6068LK3-13 Quick Information

Product Type: MOSFET
Canonical Name: N-Channel 60V MOSFET, 6A, TO-252-3
Subcategory: N-Channel MOSFET

DMN6068LK3-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free Finish

DMN6068LK3-13 Features

  • N-channel 60V enhancement mode MOSFET.
  • Low on-resistance of 68mΩ at 10V.
  • Fast switching performance with 10.3nC gate charge.
  • TO-252 surface mount package.
  • 100% UIS tested in production.

DMN6068LK3-13 Applications

  • Motor control and transformer driving.
  • DC-DC converter power management.
  • Uninterrupted power supply applications.
  • High efficiency switching circuits.

DMN6068LK3-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

60V

What package is the DMN6068LK3-13 available in?

TO-252-3 (DPak) surface mount package.

What is the operating temperature range?

-55°C to +150°C junction temperature.

Is the DMN6068LK3-13 RoHS compliant?

Yes, RoHS3 compliant with lead-free finish.

What is the maximum gate threshold voltage?

3V at 250µA.

What is the single pulse avalanche energy rating?

37.5mJ maximum.

What is the on-resistance at 4.5V gate drive?

100mΩ maximum.

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