Mfr Part #:

DMN6066SSS-13

N-Channel MOSFET with 60V drain-source voltage and 3.7A continuous drain current. Features low on-resistance of 66mOhm at 10V gate drive in a surface mount SO-8 package.

✓ Total Stock: 420 pcs

DMN6066SSS-13 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Speed Components Ltd ✓ Non-Authorised Inventory information	420 pcs On Request	420 pcs	On Request	1	On Request	On Request	15+	On Request	On Request

DMN6066SSS-13 Description

Short technical summary and product information.

The DMN6066SSS-13 is an N-channel enhancement mode MOSFET designed for efficient power management. It offers a drain-source voltage (Vdss) of 60V and a continuous drain current of 5.0A at 25°C (derated to 3.7A at ambient conditions). The device achieves a maximum on-resistance of 66mOhm at Vgs=10V and 97mOhm at Vgs=4.5V, ensuring low conduction losses.

This MOSFET supports a wide gate drive voltage range of 4.5V to 10V, with a gate threshold voltage of 3V. It features fast switching performance with a gate charge of 10.3nC and input capacitance of 502pF. The part is housed in a compact SO-8 surface-mount package with a weight of 0.074 grams.

Applications include motor control, DC-DC converters, backlighting, and general power management functions. The device is fully RoHS compliant, halogen-free, and qualified to AEC-Q101 standards for high-reliability automotive use. Moisture sensitivity level is 1 per J-STD-020, making it suitable for lead-free soldering processes.

DMN6066SSS-13 Quick Information

Product Type: N-Channel MOSFET

Canonical Name: DMN6066SSS-13 N-Channel Enhancement Mode MOSFET

Subcategory: N-Channel Enhancement Mode

DMN6066SSS-13 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): Level 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Totally Lead-Free

DMN6066SSS-13 Features

Low on-resistance of 66mOhm typical at 10V.
Fast switching performance with 10.3nC gate charge.
AEC-Q101 qualified for automotive reliability.
Surface mount SO-8 package for compact designs.
Halogen-free and RoHS compliant construction.

DMN6066SSS-13 Applications

Ideal for motor control circuits.
Used in DC-DC converter designs.
Suitable for backlighting applications.
Power management functions in portable devices.

DMN6066SSS-13 FAQs

6 frequently asked questions generated from this part’s specifications.

What is the operating temperature range for DMN6066SSS-13?

The operating junction temperature range is -55°C to 150°C.

What package does the DMN6066SSS-13 come in?

The device is packaged in an SO-8 (8-SOIC) surface mount package with dimensions 0.154" x 3.90mm width.

Is the DMN6066SSS-13 RoHS compliant?

Yes, it is fully RoHS compliant per EU Directive 2002/95/EC and 2011/65/EU, and also halogen-free.

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (Vdss) is 60V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 5.0A at Ta=25°C with Vgs=10V, derated to 4.0A at 70°C and 3.7A at ambient.

What is the on-resistance at 10V gate drive?

The maximum on-resistance (Rds(on)) is 66mOhm at Vgs=10V and Id=4.5A.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Diodes Incorporated
Current	3.7 A (Ta)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.3 nC @ 10 V
Halogen Free	Halogen and Antimony Free, Green Device
Input Capacitance (Ciss) (Max) @ Vds	502 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	1.56W (Ta)
Rds On (Max) @ Id, Vgs	66 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA
Weight	0.074 grams