DistyParts Icon
DMN6066SSD-13 DMN6066SSD-13 is a 60V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features 4.4A continuous drain current, 66mΩ on-resistance at 10V, and logic level gate drive.
Mfr Part #:

DMN6066SSD-13

Available from 1 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
DMN6066SSD-13 is a 60V dual N-channel enhancement mode MOSFET from Diodes Incorporated. It features 4.4A continuous drain current, 66mΩ on-resistance at 10V, and logic level gate drive.
✓ Total Stock: 261,020 pcs

DMN6066SSD-13 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
261,020 pcs
On Request
261020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN6066SSD-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
View Similar Products (0)

DMN6066SSD-13 Description

Short technical summary and product information.

The DMN6066SSD-13 is a 60V dual N-channel enhancement mode MOSFET from Diodes Incorporated, designed for high-efficiency power management applications. It offers a maximum drain-source voltage of 60V and continuous drain current of 4.4A at 25°C. On-resistance is rated at 66mΩ maximum at Vgs=10V and 97mΩ at Vgs=4.5V, enabling logic level operation. The device features fast switching with a typical gate charge of 10.3nC at 10V and input capacitance of 502pF at 30V. It is rated for single pulsed avalanche energy of 37.5mJ. Packaged in an SO-8 (8-SOIC) surface mount package, it is MSL1 compliant and suitable for automated assembly. The MOSFET is fully RoHS3 compliant, lead-free, and halogen-free. Operating junction temperature range is -55°C to 150°C. Typical applications include motor controls, DC-DC converters, backlighting, and general power management functions.

DMN6066SSD-13 Quick Information

Product Type: Dual N-Channel MOSFET
Canonical Name: DMN6066SSD-13 - 60V Dual N-Channel Enhancement Mode MOSFET
Subcategory: Arrays

DMN6066SSD-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free

DMN6066SSD-13 Features

  • 60V drain-source voltage rating.
  • 4.4A continuous drain current.
  • 66mΩ on-resistance at 10V gate drive.
  • Logic level gate threshold voltage.
  • RoHS3 compliant and halogen-free.

DMN6066SSD-13 Applications

  • Ideal for motor control applications.
  • Used in DC-DC converter circuits.
  • Suitable for backlighting power management.
  • Power management functions in portable devices.

DMN6066SSD-13 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60V.

What is the package type?

8-SOIC (0.154", 3.90mm Width) also known as SO-8.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the DMN6066SSD-13 RoHS compliant?

Yes, it is RoHS3 compliant and lead-free.

What is the continuous drain current?

4.4A at TA=+25°C.

Home
Account

Categories