| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,100 pcs
|
2100 pcs | On Request | 1 | On Request | On Request | 1928+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Industrial Grade | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| SVHC Present |
The Diodes Incorporated DMN6040SVT-7-36 is an N-Channel MOSFET designed for efficient power management applications. It features a drain-to-source voltage (Vdss) of 60V and can handle a continuous drain current (Id) of 5A at 25°C.
Key electrical characteristics include a maximum Rds(on) of 44mOhm at 4.3A and 10V gate drive, and a gate threshold voltage (Vgs(th)) of 3V maximum at 250µA. The MOSFET has a maximum gate-source voltage (Vgs) of ±20V and an input capacitance (Ciss) of 1287pF at 25V Vds. The maximum power dissipation is rated at 1.2W (Ta).
This device operates within a wide temperature range of -55°C to 150°C (junction). It is supplied in a TSOT-26 package, suitable for surface mounting, and is designed for low-profile PCB layouts. The MOSFET is ideal for applications such as load switches, DC-DC conversion, and battery management systems in portable and industrial electronics.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60V.
TSOT-26 (also SOT-23-6 Thin).
-55°C to 150°C (junction).
3V at 250µA drain current.
44mOhm at 4.3A drain current and 10V gate-source voltage.
22.4nC maximum at 10V gate-source voltage.
1.2W at ambient temperature.