| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31,020 pcs
|
31020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,650 pcs
|
8650 pcs | On Request | 1 | On Request | On Request | 1436+ | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
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The DMN6040SVT-7 is a 60V N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It offers a maximum drain-source voltage of 60V and a continuous drain current of 5.0A at 25°C (steady state, VGS=10V). The device features a low on-resistance of 44mΩ maximum at VGS=10V and 60mΩ at VGS=4.5V, enabling low conduction losses.
The MOSFET is optimized for DC-DC converters, power management functions, and backlighting applications. It provides fast switching speed and low input capacitance (1287pF at Vds=25V). The device is 100% tested for unclamped inductive switching (UIS) and has a maximum gate charge of 22.4nC.
The DMN6040SVT-7 is housed in a compact TSOT26 (SOT-23-6 Thin) surface-mount package. It is RoHS compliant, halogen-free, and qualified to AEC-Q101 standards for automotive reliability. The operating junction temperature range is -55°C to 150°C.
The maximum drain-source voltage is 60V.
It comes in a TSOT26 (SOT-23-6 Thin) surface-mount package.
Junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and halogen-free.
Maximum on-resistance is 44mΩ at VGS=10V and 4.3A.
5.0A at 25°C steady state with VGS=10V.