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DMN6040SSDQ-13 Dual N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 5A continuous drain current with low on-resistance of 40mOhm.
Mfr Part #:

DMN6040SSDQ-13

Available from 2 distributors
Mfr Name: Diodes Incorporated
Diodes Incorporated
Dual N-Channel enhancement mode MOSFET from Diodes Incorporated. Rated for 60V drain-source voltage and 5A continuous drain current with low on-resistance of 40mOhm.
✓ Total Stock: 2,492,101 pcs

DMN6040SSDQ-13 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
2,491,020 pcs
On Request
2491020 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,081 pcs
On Request
1081 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

DMN6040SSDQ-13 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Termination Finish
Vgs(th) (Max) @ Id
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DMN6040SSDQ-13 Description

Short technical summary and product information.

The DMN6040SSDQ-13 is a dual N-channel enhancement mode MOSFET designed for high efficiency power management. It features a maximum drain-source voltage of 60V and continuous drain current of 5A at 25°C ambient. The device offers low on-resistance of 40mOhm at Vgs=10V, minimizing conduction losses. With low input capacitance (1287pF) and total gate charge of 22.4nC, it enables fast switching performance. The MOSFET is housed in an SO-8 surface-mount package with tin-plated leads, suitable for automated assembly. It is RoHS3 compliant, halogen-free, and qualified to AEC-Q101 for automotive applications. Typical applications include DC-DC converters, power management functions, and backlighting.

DMN6040SSDQ-13 Quick Information

Product Type: MOSFET Array
Canonical Name: DMN6040SSDQ-13 Dual N-Channel Enhancement Mode MOSFET
Subcategory: Dual N-Channel Enhancement Mode MOSFET

DMN6040SSDQ-13 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Moisture Sensitivity Level 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Lead-Free (No purposely added lead)

DMN6040SSDQ-13 Features

  • Dual N-channel configuration in SO-8 package.
  • 60V maximum drain-source voltage rating.
  • 5A continuous drain current at 25°C.
  • Low on-resistance of 40mOhm at 10V gate drive.
  • AEC-Q101 qualified for automotive applications.

DMN6040SSDQ-13 Applications

  • Used in DC-DC converter circuits.
  • Ideal for power management functions.
  • Suitable for backlighting applications.

DMN6040SSDQ-13 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

60V.

What is the continuous drain current rating?

5A at Ta=25°C.

What is the on-resistance?

40mOhm max at Vgs=10V, Id=4.5A.

What package is this MOSFET available in?

SO-8 (8-SOIC).

What is the operating temperature range?

-55°C to 150°C.

Is the device RoHS compliant?

Yes, RoHS3 compliant.

What is the gate threshold voltage?

3V max at Id=250µA.

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