| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
298,520 pcs
|
298520 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
12,600 pcs
|
12600 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
7,386 pcs
|
7386 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,155 pcs
|
2155 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request | |
|
17 pcs
|
17 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN6040SSD-13 is a dual N-channel enhancement mode MOSFET designed for high-efficiency power management applications. It integrates two independent MOSFETs in a compact 8-SOIC package, offering a 60V drain-source breakdown voltage and continuous drain current rating of 5A at 25°C. The device features a logic level gate, enabling operation at 4.5V gate drive with a maximum on-resistance of 55mΩ, and 40mΩ at 10V.
Key electrical characteristics include a low input capacitance of 1287 pF, gate charge of 22.4 nC, and avalanche energy rating of 10 mJ. The MOSFET is suitable for DC-DC converters, power management functions, and backlighting applications. It is built with molded plastic case material rated UL 94V-0 and tin-finished copper leadframes.
The device is fully RoHS compliant, halogen and antimony free, and qualified to AEC-Q101 standards. Moisture sensitivity level is 1 (unlimited) per J-STD-020. Packaging is tape and reel with 2,500 pieces per reel.
The maximum drain-source voltage (Vdss) is 60 V.
It is available in an 8-SOIC (0.154", 3.90mm Width) surface mount package.
The operating junction temperature range is -55°C to 150°C.
Yes, it is RoHS3 compliant and totally lead-free as stated in the datasheet.
The maximum on-resistance is 40 mΩ at VGS=10V, ID=4.5A, and 55 mΩ at VGS=4.5V, ID=4.4A.
The maximum gate threshold voltage is 3 V at ID=250 µA.
It is a dual N-channel MOSFET with two independent devices in one package.