| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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307,020 pcs
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307020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The DMN6040SFDEQ-7 is a 60V N-Channel enhancement mode MOSFET designed for automotive applications. It is qualified to AEC-Q101 standards and supports PPAP requirements.
Electrical characteristics: With a drain-source voltage rating of 60V, it can handle a continuous drain current of 5.3A at 25°C ambient. The device features a low on-resistance of 38mΩ maximum at 10V gate drive, and 47mΩ at 4.5V. Gate threshold voltage is 3V maximum at 250µA drain current. Input capacitance is 1287pF at 25V drain-source, and total gate charge is 22.4nC at 10V gate drive.
Package and thermal: The MOSFET is available in a compact U-DFN2020-6 (Type E) surface mount package with a 0.6mm profile, ideal for low-profile applications. Power dissipation is 660mW at ambient temperature, and operating junction temperature range is -55°C to 150°C. The device is RoHS compliant, halogen and antimony free, and has MSL Level 1 moisture sensitivity.
Applications: Typical applications include power management functions, DC-DC converters, and backlighting. Its low on-resistance and small footprint make it suitable for space-constrained designs.
60V.
U-DFN2020-6 (Type E) surface mount package.
-55°C to 150°C (junction temperature).
Yes, it is RoHS3 compliant and totally lead-free.
38mΩ at 10V gate drive (4.3A) and 47mΩ at 4.5V gate drive.
22.4nC maximum at 10V gate drive.
5.3A at 25°C ambient temperature.